GaN Transistor Modeling for RF and Power Electronics : Using the ASM-HEMT Model (Woodhead Publishing Series in Electronic and Optical Materials)

Chauhan, Yogesh Singh/ Pampori, Ahtisham Ul Haq/ Ahsan, Sheikh Aamir

Woodhead Publishing（2024/05発売）

• 製本 Paperback:紙装版/ペーパーバック版／ページ数 260 p.
• 言語 ENG
• 商品コード 9780323998710
• DDC分類 621.381528

Full Description

GaN Transistor Modeling for RF and Power Electronics: Using The ASM-GaN-HEMT Model covers all aspects of characterization and modeling of GaN transistors for both RF and Power electronics applications. Chapters cover an in-depth analysis of the industry standard compact model ASM-HEMT for GaN transistors. The book details the core surface-potential calculations and a variety of real device effects, including trapping, self-heating, field plate effects, and more to replicate realistic device behavior. The authors also include chapters on step-by-step parameter extraction procedures for the ASM-HEMT model and benchmark test results.

GaN is the fastest emerging technology for RF circuits as well as power electronics. This technology is going to grow at an exponential rate over the next decade. This book is envisioned to serve as an excellent reference for the emerging GaN technology, especially for circuit designers, materials science specialists, device engineers and academic researchers and students.

Contents

Part I: Introduction
1. GaN Device Physics
2. GaN HEMT Models

Part II: ASM-HEMT Model
3. Surface Potential, 2DEG, and Drain Current Model 
4. Self-Heating and Temperature Effects
5. Noise and Gate Current

Part III: ASM-HEMT for GaN Power Electronics 
6. GaN Power Device Characterization
7. Terminal Charges and Capacitances
8. TCAD Simulation
9. Switching Collapse

Part IV: ASM-HEMT for GaN RF Electronics
10. Characterization of RF GaN HEMTs
11. RF Modeling-I 
12. RF Modeling-II

Part V: Miscellaneous
13. Parameter Extraction
14. Model Quality Testing