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Full Description
As the requirements of the semiconductor industry have become more demanding in terms of resolution and speed it has been necessary to push photoresist materials far beyond the capabilities previously envisioned. Currently there is significant worldwide research effort in to so called Next Generation Lithography techniques such as EUV lithography and multibeam electron beam lithography.
These developments in both the industrial and the academic lithography arenas have led to the proliferation of numerous novel approaches to resist chemistry and ingenious extensions of traditional photopolymers. Currently most texts in this area focus on either lithography with perhaps one or two chapters on resists, or on traditional resist materials with relatively little consideration of new approaches.
This book therefore aims to bring together the worlds foremost resist development scientists from the various community to produce in one place a definitive description of the many approaches to lithography fabrication.
Contents
1. Overview of materials and processes for lithography
2. Molecular excitation and relaxation of extreme ultraviolet lithography photoresists
3. Theory: Electron-induced chemistry
4. EUV lithography process challenges
5. EUV lithography patterning challenges
6. The chemistry and application of nonchemically amplified (non-CA) chain-scission resists
7. Chemically amplified resists and acid amplifiers
8. Negative-tone organic molecular resists
9. Positive molecular resists
10. Mainstreaming inorganic metal-oxide resists for high-resolution lithography
11. Molecular organometallic resists for EUV (MORE)
12. SML electron beam resist: Ultra-high aspect ratio nanolithography
13. Alternative resist approaches
14. Next generation lithography—the rise of unconventional methods?
15. Tip-based nanolithography methods and materials
16. Thermal scanning probe lithography
17. Scanning helium ion beam lithography
