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基本説明
Thin films play a key role in the material science of microelectronics, and the subject matter of thin-films divides naturally into two headings: processing / structure relationship, and structure / properties relationship. The first volume of Materials Science in Microelectronics focuses on the first relationship – that between processing and the structure of the thin-film.
Full Description
Thin films play a key role in the material science of microelectronics, and the subject matter of thin-films divides naturally into two headings: processing / structure relationship, and structure / properties relationship.The first volume of Materials Science in Microelectronics focuses on the first relationship - that between processing and the structure of the thin-film. The state of the thin film's surface during the period that one monolayer exists - before being buried in the next layer - determines the ultimate structure of the thin film, and thus its properties. This volume takes into consideration the following potential influencing factors: crystal defects, void structure, grain structure, interface structure in epitaxial films, the structure of amorphous films, and reaction-induced structure.An ideal text or reference work for students and researchers in material science, who need to learn the basics of thin films.
Contents
ContentsAcknowledgment Foreword Preface to Revised Edition Chapter I Deposition Parameters 1. Identification of Deposition Parameters that May Affect Thin Film Structure2. Discussion of Vapor Deposition Parameters2.1. Background Pressure of Chamber and Purity of Precursors2.2. Line-of-Sight Travel of Incident Particles2.3. Incident Particle Energy2.4. Incident Particle Flux2.5. Substrate and Its Cleanliness2.6. Substrate Temperature2.7. Composition of Deposit Relative to Target2.8. Target3. Deposition Parameters for Other Than PVD4. SummaryChapter II Defect Structure 1. Intercolumn (Interfiber) "Void" Networks1.1. Summary of Observations Concerning Intercolumn "Void" Networks1.2. Origin of Intercolumn "Void" Networks1.3. Effect of Processing On Void and Column Structure1.4. Temperature, T1, Delineating Transition Between Presence and Absence of "Void" Networks 1.5. Crystalline Versus Amorphous Structure in Zone 11.6. Instability of "Void" Network1.7. Deposition Methods That Eliminate The Formation of "Void" Networks2. Other Defects Introduced During Deposition At Low Substrate Temperature2.1. Point Defects2.2. Line Defects - Dislocations2.3. Grain Boundaries and Stacking Faults2.4. Three-Dimensional Defects3. Summary of The Relations Between Deposition Methods and Defect StructuresChapter III Grain Structure 1. Materials Science Background2. Grain Morphology, Texture, and Size in As-Deposited Films2.1. Vapor Deposition Onto Epitaxial Substrates in the Absence of Incident Energetic Particles. 2.2. Vapor Deposition Onto Non-Epitaxial Substrates in the Absence of Incident Energetic Particles. 2.3. Effect of Anisotropic Sticking Coefficient2.4. Polycrystalline Semiconductors On Non-Epitaxial Substrates2.5. Conclusions Regarding Grain Morphology, Size and Texture Produced Via Vapor Deposition in the Absence of Energetic Particles3. Grain Morphology, Texture and Size in Vapor-Deposited Films Which Sense Energetic (Hyperthermal) Particles During Deposition3.1. Deposition Onto Epitaxial Substrates3.2. Deposition Onto Non-Epitaxial Substrates3.3. Summary of Results On The Effects of Energetic Particle Bombardment During Deposition4. Effects of Post-Deposition Processing On Grain Structure4.1. Effect of Post-Deposition Annealing4.2. Post-Deposition Bombardment At Elevated TemperatureChapter IV Epitaxial Structures 1. Modes of Growth in Production of Epilayers1.1. Modes of Growth1.2. Modes of F-M Epilayer Growth2. Defects Produced in Homoepitaxial Layers2.1. Point Defects and their Clusters2.2. Line and Planar Defects3. Defects in Pseudomorphic Films3.1. Coherent (Commensurate) Pseudomorphic Films3.2. Pseudomorphically Stabilized Metastable Crystal Structures3.3. Commensurate-Discommensurate Transition and Misfit Dislocations4. Heteroepitaxy Between Crystals of Different Symmetry, Bonding Class or of Large Misfit4.1. Metal/Metal Epilayer/Substrate Systems4.2. Metal/Semiconductor Epilayer/Substrate Systems4.3. Epitaxy At Vicinal Surfaces4.4. Theories of Interphase Interfaces4.5. Constraints On Epitaxy Due to Symmetry5. Graphoepitaxy6. EpilogueChapter V Structure of Amorphous Films 1. Amorphous Covalently Bonded Semiconductors1.1. Non-Hydrogenated and Hydrogenated Group IV Elements1.2. Amorphous Semiconductor Alloys and Compounds2. Amorphous Metals and Alloys3. Amorphous Oxides3.1. Amorphous Silicon Oxide3.2. High Dielectric Constant Amorphous Oxides4. Amorphous 4 Crystalline TransitionChapter VI Stresses in Thin Films 1. Intrinsic Stress1.1. Non-Energetic Deposition1.2. Intrinsic Stress When Film Surface Senses Energetic Particles 1.3. Intrinsic Stress Due to Phase Transformation1.4. Intrinsic Stress Due to Epitaxy2. Thermal StressChapter VII Reaction-Induced Structure 1. Heterogeneous Reactions Between Thin Monocrystalline Layers1.1. Completely Miscible Layers2. Layers of Immiscible Components But Forming Intermediate Compounds2.1. Epitaxial Monocrystalline Product Phase2.2. Polycrystalline Compound Products3. Reactions Between Adatoms and Substrate3.1. Silicon Dioxide Films4. Amorphous to Crystalline Transitions4.1. Silicon4.2. Carbon4.3. Amorphous to Crystalline Transition in Other Materials4.4. Summary of Section 4Chapter VIII Surface Structure1. Surface Roughness2. Surface Modification for Producing Ordered Arrays2.1. Periodic Surface Reconstruction Pattern2.2. Periodic Surface Strain Pattern2.3. Periodic Ledge Pattern2.4. Periodic Surface Phase Pattern2.5. Periodic Nanodots Via Kinetic Control3. Processing and Surface ReconstructionIndex
