The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices〈1st ed. 2016〉

著者名：Li, Zhiqiang

Springer（2016/03/24発売）

• 言語：ENG
• ISBN：9783662496817
• eISBN：9783662496831

Description

This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With  adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600℃ and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced  source/drain parasitic resistance is demonstrated in the  fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.

Table of Contents

Introduction.- Ge-based Schottky barrier height modulation technology.- Metal germanide technology.- Contact resistance of Ge-based devices.- Conclusions.