Description
Understanding and limiting electromigration in thin films is essential to the continued development of advanced copper interconnects for integrated circuits. Electromigration in thin films and electronic devices provides an up-to-date review of key topics in this commercially important area.Part one consists of three introductory chapters, covering modelling of electromigration phenomena, modelling electromigration using the peridynamics approach and simulation and x-ray microbeam studies of electromigration. Part two deals with electromigration issues in copper interconnects, including x-ray microbeam analysis, voiding, microstructural evolution and electromigration failure. Finally, part three covers electromigration in solder, with chapters discussing topics such as electromigration-induced microstructural evolution and electromigration in flip-chip solder joints.With its distinguished editor and international team of contributors, Electromigration in thin films and electronic devices is an essential reference for materials scientists and engineers in the microelectronics, packaging and interconnects industries, as well as all those with an academic research interest in the field.- Provides up-to-date coverage of the continued development of advanced copper interconnects for integrated circuits- Comprehensively reviews modelling of electromigration phenomena, modelling electromigration using the peridynamics approach and simulation, and x-ray microbeam studies of electromigration- Deals with electromigration issues in copper interconnects, including x-ray microbeam analysis, voiding, microstructural evolution and electromigration failure
Table of Contents
Contributor contact detailsPart I: IntroductionChapter 1: Modeling of electromigration phenomenaAbstract:1.1 Introduction1.2 Analytical methods1.3 Numerical methods1.4 ConclusionChapter 2: Modeling electromigration using the peridynamics approachAbstract:2.1 Introduction2.2 Previous approaches to modeling electromigration (EM)2.3 Peridynamics (PD)2.4 PD and EM2.5 Illustrative example2.6 Computational requirements: present and future2.7 ConclusionsChapter 3: Modeling, simulation, and X-ray microbeam studies of electromigrationAbstract:3.1 Introduction3.2 Modeling and simulation approaches3.3 Experimental, modeling and simulation findings3.4 Conclusions3.5 AcknowledgmentsPart II: Electromigration in copper interconnectsChapter 4: X-ray microbeam analysis of electromigration in copper interconnectsAbstract:4.1 Introduction4.2 Samples and X-ray microdiffraction methods4.3 Electromigration (EM)-induced strains in conductor lines4.4 Conclusions and summary4.6 AppendixChapter 5: Voiding in copper interconnects during electromigrationAbstract:5.1 Introduction5.2 Void nucleation5.3 Void growth5.4 Immortality5.5 Future trends5.6 AcknowledgementsChapter 6: The evolution of microstructure in copper interconnects during electromigrationAbstract:6.1 Introduction6.2 Copper microstructure evolution during electromigration6.3 Plasticity and materials degradation mechanisms in copper interconnects6.4 Implications for the reliability of advanced copper interconnect schemes6.5 Conclusions and future trendsChapter 7: Scaling effects on electromigration reliability of copper interconnectsAbstract:7.1 Introduction7.2 Mass transport during electromigration (EM)7.3 Effect of via scaling on EM reliability7.4 Multi-linked statistical tests for via reliability7.5 Methods to improve the EM lifetime7.6 Conclusion and future trends7.7 AcknowledgementsChapter 8: Electromigration failure in nanoscale copper interconnectsAbstract:8.1 Process solutions being developed for copper interconnects8.2 Electromigration (EM) scaling by generation8.3 Suppression by metal capping: blocking rate-limiting EM pathways8.4 Copper microstructure impact8.5 Conclusions8.6 AcknowledgementsPart III: Electromigration in solderChapter 9: Electromigration-induced microstructural evolution in lead-free and leadâ€"tin soldersAbstract:9.1 Introduction9.2 Intermetallic compound formation9.3 Void formation9.4 Formation of whisker and hillock9.5 Grain reorientation and grain rotation9.6 Dissolution and recrystallizationChapter 10: Electromigration in flip-chip solder jointsAbstract:10.1 Introduction10.2 Electromigration (EM)-induced voiding failure of solder interconnects10.3 Joule heating-enhanced dissolution of under bump metallurgy (UBM) and the diffusion of on-chip metal interconnects10.4 Stress-related degradation of solder interconnects under EM10.5 Thermomigration (TM) behavior in solder interconnects under a thermal gradient10.6 Conclusions10.7 AcknowledgementsIndex
