Nanometer CMOS

Schwierz, Frank/ Wong, Hei/ Liou, Juin J.

Pan Stanford Publishing / World Scientific Pub（2008/04発売）

• 製本 Hardcover:ハードカバー版／ページ数 300 p.
• 商品コード 9789812707093

基本説明

Give a comorehensive overview of all the omportant issues concerning modern Si MOSFETs.

Full Description

This book gives a comprehensive overview of all the important issues concerning modern Si MOSFETs. It covers the principles of MOSFET operation, theory, scaling issues, and an in-depth discussion of nanometer MOSFETs. Both classical nanometer MOSFETs as well as non-classical MOSFET concepts, which receive little coverage in textbooks, are treated in detail. The device structures, merits, and drawbacks of MOSFET concepts like strained Si MOSFETs, ultra-thin body SOI MOSFETs, and multiple gate MOSFETs (FinFETs, Tri-gate MOSFETs) are presented. An entire chapter is devoted to the emerging and rapidly growing field of RF MOSFETs/RF CMOS, and the discussion extends to the important future trends in of nanometer CMOS technology and the problems and limits of scaling.

Contents

Evolution and Recent Advances in Si Electronics; MOSFET Fundamentals, Theory, and Modeling; Nanometer MOSFETs; RF MOSFETs; Overview of Nanometer CMOS Technology; Challenges of Giga-Scale Integration.