The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices (Springer Theses)

Li, Zhiqiang

Springer-Verlag Berlin and Heidelberg GmbH & Co. K（2018/06発売）

• 製本 Paperback:紙装版/ペーパーバック版／ページ数 59 p.
• 言語 ENG
• 商品コード 9783662570265
• DDC分類 530.41

Full Description

This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With  adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600℃ and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8x10-7Ω•cm2, respectively. Besides, a reduced  source/drain parasitic resistance is demonstrated in the  fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.

Contents

Introduction.- Ge-based Schottky barrier height modulation technology.- Metal germanide technology.- Contact resistance of Ge-based devices.- Conclusions.