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Full Description
Shuji Nakamura's development of a blue semiconductor laser on the basis of GaN opens the way for a host of new applications of semiconductor lasers. The wavelengths can be tuned by controlling the composition. For the first time it is possible to produce lasers with various wavelengths, ranging from red through yellow and green to blue, in one substrate material. This fact, together with their high efficiency, makes GaN-based lasers very useful for a wide spectrum of applications. The second edition of this basic book on GaN-based devices has been updated and significantly extended. It includes a survey of worldwide research on GaN, as well as Nakamura's latest important developments. The reader finds a careful introduction to the physics and properties of GaN. The main part of the book deals with the production and characteristics of GaN LDs and LEDs. To complete the spectrum of applications, GaN power devices are also described.
Contents
1. Introduction.- 2. Background.- 3. Physics of Gallium Nitride and Related Compounds.- 4. GaN Growth.- 5. p-Type GaN Obtained by Electron Beam Irradiation.- 6. n-Type GaN.- 7. p-Type GaN.- 8. InGaN.- 9. Zn and Si Co-Doped InGaN / AlGaN Double-Heterostructure Blue and Blue-Green LEDs.- 10. InGaN Single-Quantum-Well LEDs.- 11. Room-Temperature Pulsed Operation of Laser Diodes.- 12. Emission Mechanisms of LEDs and LDs.- 13. Room Temperature CW Operation of InGaN MQW LDs.- 14. Latest Results: Lasers with Self-Organized InGaN Quantum Dots.- 15. Conclusions.- Biographies.- Shuji Nakamura.- Gerhard Fasol.- Stephen Pearton.- References.
