- ホーム
- > 洋書
- > ドイツ書
- > Mathematics, Sciences & Technology
- > Technology
- > electronics, electrical engineering, telecommunications
Full Description
Almost all semiconductor devices contain metal-semiconductor, insulator-semiconductor, insulator-metal and/or semiconductor-semiconductor interfaces; and their electronic properties determine the device characteristics. This is the first monograph that treats the electronic properties of all different types of semiconductor interfaces. Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling's electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.
Contents
1. Introduction.- 2. Depletion Layer.- 3. Determination of Barrier Heights and Offsets.- 4. Laterally Inhomogeneous Schottky Contacts.- 5. The IFIGS-and-Electronegativity Theory.- 6. The MIGS-and-Electronegativity Concept: Experiment and Theory.- 7. First-Principles Calculations of Barrier Heights and Valence-Band Offsets.- 8. Temperature and Pressure Effects.- 9. Barrier Heights and Extrinsic Interface Defects.- 10. Extrinsic Interface Dipoles.- 11. Ohmic Contacts.- References.