Description
Semiconductor components based on silicon have been used in a wide range of applications for some time now. These elemental semiconductors are now well researched and technologically well developed. In the meantime the focus has switched to a new group of materials: ceramic semiconductors based on nitrides are currently the subject of research due to their optical and electronic characteristics. They open up new industrial possibilities in the field of photosensors, as light sources or as electronic components.
This collection of review articles provides a systematic and in-depth overview of the topic, on both a high and current level. It offers information on the physical basics as well as the latest results in a compact yet comprehensive manner. The contributions cover the physical processes involved in manufacture, from semiconductor growth, via their atomic structures and the related characteristics right up to future industrial applications. A highly pertinent book for anyone working in applied materials research or the semiconductor industry. 1. High Pressure Crystallization of GaN (I. Grzegory, S. Krukowski, M. Leszczynski, P. Perlin, T. Suski, and S. Porowski)
2. Epitaxial Lateral Overgrowth of GaN (P. Gibart, B. Beaumont, and P. Vennéguès)
3. Plasma Assisted Molecular Beam Epitaxy of III-V Nitrides (A. Georgakilas, H. M. Ng, and Ph. Komninou)
4. The Growth of Gallium Nitride by Hydride Vapour Phase Epitaxy (HVPE) (A. Trassoudaine, R. Cadoret and E. Aujol)
5. Growth and Properties of InN (V. Yu. Davydov, A. A. Klochikhin, S. V. Ivanov, I. Aderhold, and A. Yamamoto)
6. Ab initio Analysis of Surface Structures and Adatom Kinetics of Group-III Nitrides (J. Neugebauer)
7. Topological Analysis of Defects in Nitride Semiconductors (G. P. Dimitrakopulos, Ph. Komninou, Th. Karakostas, and R. C. Pond)
8. Extended Defects in Wurtzite GaN Layers: Atomic Structure, Formation and Interaction Mechanisms (P. Ruterana, A. M. Sánchez, and G. Nouet)
9. Stain, Chemical Composition and Defects Analysis at Atomical Level in GaN Based Epitaxial Layers (S. Kret, P. Ruterana, C. Delamarre, T. Benabbas, and P. Dluzewski)
10. Ohmic Contacts to GaN (P. J. Hartlieb, R. J. Nemanich, and R.F. Davis)
11. Electroluminescent Diodes and Laser Diodes (H. Amano)
12. GaN-based Modulation Doped FETs and Heterojunction Bipolar Transistors ( H. Morkoç, L. Liu)
13. GaN Based UV Photodetectors (Franck Omnes, Eva Monroy) Jörg Neugebauer is Director of the Computational Materials Design Department at the Max-Planck-Institute for Iron Research. Since 2003 he is Chair of Theoretical Physics at the University of Paderborn. At the Ruhr-University Bochum he helds positions as Honorary Professor and Director of the advanced study group 'Modeling' at the Interdisciplinary Center for Advanced Materials Simulation (ICAMS). His research interests cover Surface and Defect Physics, ab initio scale-bridging computer simulations, ab initio based Thermodynamics and Kinetics, and the theoretical study of epitaxy, solidification, and microstructures.
