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Full Description
Explores HfO2-based ferroelectrics for memory, sensing, and advanced electronic applications
Ferroelectric hafnium oxide (HfO2)-based materials have transformed the field of electronic materials and device design, offering pathways to overcome long-standing barriers in scalability, compatibility, and reliability. The emergence of robust ferroelectricity in doped HfO2 has revolutionized both research and industry perspectives, providing a viable solution where conventional ferroelectrics often fell short.
With contributions from leading experts, HfO2-Based Ferroelectric Materials addresses the critical need for a consolidated reference on HfO2-based ferroelectrics, offering foundational knowledge as well as the latest insights into fabrication, material characterization, and device integration. The book opens with fundamentals of ferroelectricity and the mechanisms driving HfO2-based ferroelectric behavior, before progressing to detailed examinations of deposition techniques, superlattice structures, and reliability considerations. It further explores a broad spectrum of applications, including non-volatile memories, neuromorphic computing, compute-in-memory architectures, and negative capacitance transistors, alongside emerging roles in energy storage, microwave technologies, and piezoelectric systems. Special attention is given to persistent challenges—such as the wake-up effect, fatigue, and imprint issues—and the strategies developed to mitigate them.
An authoritative and well-structured resource for advancing the frontiers of electronic materials and device technologies, HfO2-Based Ferroelectric Materials:
Explains the origins of ferroelectricity in doped HfO2 and its unique material advantages
Details deposition techniques and approaches to regulating ferroelectric behavior
Examines device-level challenges, including wake-up effect, fatigue, and imprint reliability
Highlights applications spanning non-volatile memories, neuromorphic computing, and energy-efficient devices
Discusses advanced designs such as superlattice-like laminate structures and 3D ferroelectric memories
Provides insight into the reliability of HfO2-based thin films, capacitors, and field-effect transistors
HfO2-Based Ferroelectric Materials: Fabrication, Characterization, and Device Applications is an essential resource for materials scientists, electronics engineers, semiconductor and solid-state physicists, and professionals in the semiconductor and sensor industries. It is also a valuable reference for graduate-level courses in electronic materials, semiconductor devices, and advanced nanotechnology within physics, materials science, and electrical engineering degree programs.
Contents
Foreword vii
Preface ix
Acknowledgments xi
1 Fundamentals of Ferroelectricity and Ferroelectric Materials 1
Yan Zhang, Xubing Lu, and Jun-ming Liu
2 Oxygen Vacancy-induced Ferroelectricity in HfO2 27
Chenxi Yu, Fei Liu, and Jinfeng Kang
3 Origin and Multiple Regulations of Ferroelectric Properties in HfO2 -based Materials 55
Tian-Ling Ren, Houfang Liu, Dapeng Huang, and Yi Yang
4 Design of HfO2 Ferroelectric Materials with Superlattice-like Laminate Structure 103
Chunlai Luo, Ruiqiang Tao, and Wenwu li
5 High-energy-efficiency Computing Applications for HfO2 -based Ferroelectric Materials 139
Xiao Yu, Peiyuan Du, Kechao Tang, Zhiyuan Fu, Jin Luo, Lin Chen, Tianyu Wang, Xueqing Li, Chengji Jin, Jiajia Chen, Huan Liu, Yan Liu, and Genquan Han Copyrighted Material
6 1T1C HfO2 FeRAM Materials 177
Hitoshi Saito and Takashi Eshita
7 3D Ferroelectric Capacitor Memories for Data-centric Computing 223
Jiahui Duan and Kai Ni
8 Basic Mechanism of Si-channel HfO2 -FeFET and Its Reliability 247
Reika Ichihara and Masumi Saitoh
9 Reliability of the Hafnia-based Ferroelectric Memory 269
Wei Wei, Xuedong Zhao, and Qing Luo
10 Reliability of HfO2 -based Ferroelectric Thin Films and Field-effect Transistors 291
Min Liao, Binjian Zeng, Shuaibing Gao, and Yichun Zhou
11 Hafnia-based Materials for Neuromorphic Devices 323
Hai Zhong, Kui-juan Jin, and Chen Ge
12 HfO2 -based Ferroelectric Tunnel Junctions 367
Zheng Wen
13 HfO2 -based Ferroelectric Materials for Energy Storage Applications 403
Wentao Shuai and Jiyan Dai
14 HfO2 -based Ferroelectric Materials for Piezoelectric Applications 431
Guoliang Yuan, Guodong Zhang, and Xiao Xu
Index 459
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