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Full Description
provides the ideas of the material properties as well as the working principles of the devices based on HfO2 ferroelectrics.
Contents
Contents
Chapter 1 Fundamentals of ferroelectricity and ferroelectric material
Yan Zhang, Xubing Lu, and Jun-ming Liu
Chapter 2 Oxygen Vacancy-induced Ferroelectricity in HfO2
Chenxi Yu, Fei Liu, and Jinfeng Kang
Chapter 3 Origin and Multiple Regulations of Ferroelectric Properties in HfO2-Based Materials
Tian-Ling Ren; Houfang Liu; Dapeng Huang; Yi Yang
Chapter 4 Design of HfO2 ferroelectric materials with superlattice-like laminate structure
Chunlai Luo, Ruiqiang Tao, and Wenwu Li
Chapter 5 High energy-efficiency computing applications for HfO2-based ferroelectric materials
Xiao Yu and Peiyuan Du, Kechao Tang, Zhiyuan Fu, Jin Luo, Lin Chen, Tianyu Wang, Xueqing Li, Chengji Jin, Jiajia Chen, Huan Liu, Yan Liu, and Genquan Han
Chapter 6 1T1C HfO2 FeRAM Materials
Hitoshi Saito and Takashi Eshita
Chapter 7 3D Ferroelectric Capacitor Memories for Data-Centric Computing
Jiahui Duan and Kai Ni
Chapter 8 Basic Mechanism of Si-channel HfO2-FeFET and its reliability
Reika Ichihara, Masumi Saitoh
Chapter 9 Reliability of the Hafnia-based Ferroelectric Memory
Wei Wei, Xuedong Zhao, and Qing Luo
Chapter 10 Reliability of HfO2-based ferroelectric thin films and field-effect transistors
Min Liao, Binjian Zeng, Shuaibing Gao, and Yichun Zhou
Chapter 11 Hafnia-based Materials for Neuromorphic Devices
Hai Zhong, Kui-juan Jin, and Chen Ge
Chapter 12 HfO2-based ferroelectric tunnel junctions
Zheng Wen
Chapter 13 HfO2-based Ferroelectric Materials for Energy Storage Applications
Wentao Shuai and Jiyan Dai
Chapter 14 HfO2-based Ferroelectric Materials for Piezoelectric Applications
Guoliang Yuan
