Spin Transfer Torque Memory Devices from Materials to STT-RAM Applications

Spin Transfer Torque Memory Devices from Materials to STT-RAM Applications

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  • 製本 Hardcover:ハードカバー版/ページ数 400 p.
  • 言語 ENG
  • 商品コード 9783527334544
  • DDC分類 621.3973

Full Description

Integrating the distinct knowledge for the magnetism as well as the silicon manufacturing community, this book provides the knowledge needed by both, resulting in a much-needed overview of the characteristics of perpendicular magnetic films and the materials which can be used for spin transfer torque applications. As such, STT is explained in detail, as are magnetic random access memories (MRAM), while a chapter on recent progress in STT-RAM rounds off the book.

Contents

INTRODUCTION PERPENDICULAR MAGNETIC FILMS Magnetic Thin Films (Co/Pt)n and (Co/Ni)n Multilayers Rare-Earth/Transition-Metal Alloys L10-ordered CoPt (or FePt) Alloys HALF METALS Introduction Electronic Structure and Spin-Polarization Heat Treatment Application SPIN TRANSFER TORQUE Theoretic Prediction of STT STT in Current-Perpendicular-to-Plane Spin-Valve s(SPP-SPVs) STT in Magnetic Tunnelling Junctions (MTJs) Reduction of the Critical Current of STT MAGNETIC RANDOM ACCESS MEMORY MRAM and Spintronics Design and Fabrication Writing Technique Reading Technique Applications of MRAM RECENT PROGRESS IN STT-RAM Structure of STT-RAM Design and Fabrication STT Writing Process in STT-RAM Several Challenges

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