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Full Description
This edition is the collection of selected peer-reviewed extended papers abstracts of which were presented at the 13th European Conference on Silicon Carbide and Related Materials (ECSCRM 2020-2021), held in Tours, France, in October 2021. During the conference, held for the first time in hybrid mode due to the COVID-19 pandemic, researchers discussed issues in the field of wide bandgap semiconductors, focusing on silicon carbide and related materials. Presented articles cover a wide range of topics divided into four major sections: Material growth and wafer manufacturing; Characterization, modelling and defect engineering; Processing; Power devices and applications. The contributors are worldwide academics and industrialists.
Contents
Preface
Chapter 1: Material Growth and Wafer Manufacturing
Models for Impurity Incorporation during Vapor-Phase Epitaxy
Liquid Si-Induced 4H-SiC Surface Structuring Using a Sandwich Configuration
Defect Reduction in Epilayers for SiC Trench MOSFETs by Enhanced Epitaxial Growth
High Temperature Etching for Threading Dislocation Investigation on GaN Epi-Layer
3C-SiC Heteroepitaxial Layers Grown on Silicon Substrates with Various Orientations
A Novel Approach of Utilizing Mechanically Flexible SiC Substrate to Grow Crack-Free AlN Bulk Crystal by Thermal Strain Relaxation Functionality
The Impact of Defect Density on Mechanical Characteristics of 4H-SiC Substrates
Aluminum Activation in 4H-SiC Measured on Laterally Contacted MOS Capacitors with a Buried Current-Spreading Layer
Silicon Carbide Formation in Reactive Silicon-Carbon Multilayers
Impact of Epitaxial Defects on Device Behavior and their Correlation to the Reverse Characteristics of SiC Devices
Advances in 200 mm 4H SiC Wafer Development and Production
Toward the Reproducible Growth of Graphene on Wide SiC Steps: A Study of the Geometric Properties of 4H-SiC (0001) Substrates
Effect of N and Al Doping on 3C-SiC Stacking Faults
Impact of N Doping on 3C-SiC Defects
Large Area Growth of Cubic Silicon Carbide Using Close Space PVT by Application of Homoepitaxial Seeding
In Situ Monitoring of Unintentionally Released Nitrogen Gas in the Initial PVT Silicon Carbide Growth Process Using Mass Spectrometry
Precise Control of Al Incorporation during CVD Growth of SiC Epilayers by Using Hydrogen Chloride
Analysis of the Morphology of the Growth Interface as a Function of the Gas Phase Composition during the PVT Growth of Silicon Carbide
Designing SiC Based CMUT Structures: An Original Approach and Related Material Issues
Interfacial Dislocation Reduction by Optimizing Process Condition in SiC Epitaxy
Review of Sublimation Growth of SiC Bulk Crystals
Applicability of a Flat-Bed Birefringence Setup for the Determination of Threading Dislocations of Silicon Carbide Wafers
Chemical Vapor Deposition of 3C-SiC on [100] Oriented Silicon at Low Temperature 1MeV) Implants
Structural, Electronic and Optical Properties of 6H-SiC and 3C-SiC with the Application in Solar Cell Devices
Chapter 4: Power Devices and Applications
Design and Characterization of 10 kV High Voltage 4H-SiC p-Channel IGBTs with Low VF
Localized Lifetime Control of 10 kV 4H-SiC PiN Diodes by MeV Proton Implantation
Impact of Recovery Characteristics on Switching Loss of SiC MOSFETs
Self-Turn-On Phenomenon of SiC MOSFETs by Fast Switching Operation
Monolithic Integration of Graphene in SiC Radiation Sensors for Harsh-Environment Applications
Gate Bias Effects on SiC MOSFET Terrestrial-Neutron Single-Event Burnout
Visualization of Interface Trap Distribution for Pd/AlN/6H-SiC and Pd/HfO2/6H-SiC MOS Capacitors at 700 K
Experimental Investigation of a 10 kV-70A Switch with Six SiC-MOSFETs in a Series-Connection Configuration
Demonstration of 2kV SiC Deep-Implanted Super-Junction PiN Diodes
AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(111) for RF Applications
Comparison of the H3TRB Performance of Silicon and Silicon Carbide Power Modules
Investigation of SiC Thyristors with Varying Amplifying Gate Design
Gate Oxide Reliability and VTH Stability of Planar SiC MOS Technology
Investigations of Short Circuit Robustness of SiC IGBTs with Considerations on Physics Properties and Design
Neutron Detection Study through Simulations with Fluka
A Study of 4H-SiC Semi-Superjunction Rectifiers for Practical Realisation
DC Modeling of 4H-SiC nJFET Gate Length Reduction at 500oC
A Study of High Resistivity Semi-Insulating 4H-SiC Epilayers Formed via the Implantation of Germanium and Vanadium
Multi-Layer High-K Gate Stack Materials for Low Dit 4H-SiC Based MOSFETs
Electrothermal Modelling and Measurements of Parallel-Connected VTH Mismatched SiC MOSFETs under Inductive Load Switching
Advanced 1200V SiC MOSFET Concept Based on Singular Point Source MOS (S-MOS) Technology
Failure Analysis of Atmospheric Neutron-Induced Single Event Burnout of a Commercial SiC MOSFET
SiC Diode with Vertical Superjunction Realized Using Channeled Implant and Multi-Step Epitaxial Growth
Pulsed Forward Bias Body Diode Stress of 1700 V SiC MOSFETs with Individual Mapping of Basal Plane Dislocations
Determination of Effective Critical Breakdown Field in 4H-SiC Superjunction Devices
Comparative Performance Evaluation of Conventional and Superjunction Vertical 4H-SiC High-Voltage Power MOSFETs
Edge Terminations for 4H-SiC Power Devices: A Critical Issue
Impact of Device Design Parameters on 15 kV SiC MOSFETs
Introducing Foundry-Compatible SiC and GaN Trench Processing Technologies for Reliable Automotive Application
Performance Comparison of 6.5 kV SiC PiN Diode with 6.5 kV SiC JBS and Si Diodes
A New Approach in the Field of Hydrogen Gas Sensing Using MEMS Based 3C-SiC Microcantilevers
Compact Trench Floating Field Rings Termination for 10kV+ Rated SiC n-IGBTs
Fabrication and Characterization of Epitaxial Graphene Field Effect Transistor Devices Based on a Monolithic Bottom Gate
Modelling and Development of 4H-SiC Nanowire/Nanoribbon Biosensing FET Structures
Design and Methodology of Silicon Carbide High Voltage Termination Extension for Small Area BJTs
Thermal Simulations of a New SiC Detector Design for Neutron Measurements in JSI Nuclear Research Reactor
Clamped and Unclamped Inductive Switching of 3.3 kV 4H-SiC MOSFETs with 3D Cellular Layouts
On the Short Circuit Electro-Thermal Failure of 1.2 kV 4H-SiC MOSFETs with 3D Cell Layouts
Design of an Integrated Power Module for Silicon Carbide MOSFET with Self-Compensation of the Magnetic Field
Significant Differences in BTI and TDDB Characteristics of Commercial Planar SiC-MOSFETs
Temperature Dependence of On-State Inter-Terminal Capacitances (Cgd and Cgs) of SiC MOSFETs and Frequency Limitations of their Measurements
SiC MOSFET C-V Characteristics with Positive Biased Drain
A Scalable SPICE-Based Compact Model for 1.7 kV SiC MOSFETs
SiC MOSFET C-V Curves Analysis with Floating Drain Configuration
Experimental Analysis of C-V and I-V Curves Hysteresis in SiC MOSFETs
Behavior of Shockley-Type Stacking Faults in SiC Superjunction MOSFET under Body Diode Current Stress
Robustness of Semi-Superjunction 4H-SiC Power DMOSFETs to Single-Event Burnout from Heavy Ion Bombardment
Performance Analysis of 4H-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping Models
