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Full Description
Parameters that determine the performance of silicon-based Field Effect Transistors (FET) devices in the presence of degenerate doping, often are not modeled properly and so require precise analysis to improve modeling accuracy. The book is focused on the extraction of parameters for silicon-based FET models that critically determine the FET performance at room temperature as well as at very low temperatures. Emphasize is put on analysis that is based on the device physics, especially at low (cryogenic) temperatures. Performance of gate-all-around (GAA) nanowire FETs, and stacked nanosheet complementary FETs (C-FET) are also discussed.
Contents
Chapter 1: Accurate parameter extraction for silicon-based Field Effect Transistors (FET).- Chapter 2: Effective mass of density of states (DOS) for electron and hole in silicon.-Chapter 3: Scattering events in silicon in room temperature and cryogenic temperature.- Chapter 4: Precise determination of incomplete ionization in presence of degenerate doping and band non parabolicity, and determination of intrinsic carrier concentration in n-type and p-type silicon.- Chapter 5: Neutral impurity scattering and its effect on mobility on n and p-FETs and effect of cryogenic temperature on neutral impurity scattering.- Chapter 6: Device physics and parameter modeling at cryogenic temperature.-Chapter 7: Advanced lithography based high volume manufacturing.- Chapter 8: Performance review of gate-all-around (GAA) nanowire FETs.- Chapter 9: Performance review of stacked nanosheet complementary FETs (C-FET).
