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Full Description
The present volume of this series, following the tradition of the previous volumes, covers three major lines of research on crystallization: growth from vapor and epitaxy, growth from solution, and growth from melt. As in the previous volumes, preference is given to papers that provide original results and reviews of results obtained by the authors and those from published sources, although some of the papers are either purely original or purely of review character. The first section deals with crystal growth from vapor and epitaxy and contains three papers. One of them, on artificial epitaxy, discusses and reviews published results from the last three years in this rapidly developing area. The results are used in outlining mechanisms for oriented film growth on amorphous substrates. Another paper in this section deals with classical epitaxy, namely oriented growth on single-crystal substrates, where some important conclusions are drawn from the growth of gallium nitride films on sapphire, which concern the orientation relationships in that pair of substances. The last paper in the section deals with film growth under ion bombardment (the corresponding techniques in film crystallization have already advanced from theory to practical applications).
Contents
I. Growth from Vapor and Epitaxy.- Artificial Epitaxy: New Developments and New Mechanisms.- Orientation of Gallium Nitride on Sapphire.- Crystallization from the Gas Phase under Ion Bombardment.- II. Growth from Solution.- Growth of KDP-Group Crystals from Solution.- Physicochemical Aspects of Flux Crystallization of Oxide Materials.- Effect of Impurities on the Growth and Structure of Potassium Biphthalate Crystals.- Hydrothermal Synthesis and Crystal Structure of Sodium-Zirconium Germanates.- III. Growth from Melt.- Free Energy of a Stepped Surface.- Melt Crystallization Dynamics.- Effect of Physicochemical Crystallization Conditions on Perfection in Shaped Sapphire Crystals.- Growing Profiled Sapphire Crystals by Variational Shaping.- Growing Silicon-Carbon Components from the Melt with Shaping Elements.- Shaping Silicon with a Capillary Die.- Making Shaped Lithium Niobate and Tantalate Crystals by Stepanov's Method.
