Heteroepitaxial Semiconductors for Electronic Devices

個数:

Heteroepitaxial Semiconductors for Electronic Devices

  • 提携先の海外書籍取次会社に在庫がございます。通常3週間で発送いたします。
    重要ご説明事項
    1. 納期遅延や、ご入手不能となる場合が若干ございます。
    2. 複数冊ご注文の場合は、ご注文数量が揃ってからまとめて発送いたします。
    3. 美品のご指定は承りかねます。

    ●3Dセキュア導入とクレジットカードによるお支払いについて
  • 【入荷遅延について】
    世界情勢の影響により、海外からお取り寄せとなる洋書・洋古書の入荷が、表示している標準的な納期よりも遅延する場合がございます。
    おそれいりますが、あらかじめご了承くださいますようお願い申し上げます。
  • ◆画像の表紙や帯等は実物とは異なる場合があります。
  • ◆ウェブストアでの洋書販売価格は、弊社店舗等での販売価格とは異なります。
    また、洋書販売価格は、ご注文確定時点での日本円価格となります。
    ご注文確定後に、同じ洋書の販売価格が変動しても、それは反映されません。
  • 製本 Paperback:紙装版/ペーパーバック版/ページ数 299 p.
  • 言語 ENG
  • 商品コード 9781461262695
  • DDC分類 530

Full Description

Some years ago it was not uncommon for materials scientists, even within the electronics industry, to work relatively independently of device engi­ neers. Neither group had a means to determine whether or not the materials had been optimized for application in specific device structures. This mode of operation is no longer desirable or possible. The introduction of a new material, or a new form of a well known material, now requires a close collaborative effort between individuals who represent the disciplines of materials preparation, materials characterization, device design and pro­ cessing, and the analysis of the device operation to establish relationships between device performance and the materials properties. The develop­ ment of devices in heteroepitaxial thin films has advanced to the present state specifically through the unusually close and active interchange among individuals with the appropriate backgrounds. We find no book available which brings together a description of these diverse disciplines needed for the development of such a materials-device technology. Therefore, the authors of this book, who have worked in close collaboration for a number of years, were motivated to collect their experiences in this volume. Over the years there has been a logical flow of activity beginning with heteroepi­ taxial silicon and progressing through the III-V and II-VI compounds. For each material the early emphasis on material preparation and characteriza­ tion later shifted to an emphasis on the analysis of the device characteristics specific to the materials involved.

最近チェックした商品