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基本説明
Covers the physical principles and applications of a range of nanoscale materials and devices that are key for the energy revolution, including hybrid and organic solar cells, lithium batteries, and supercapacitors.
Full Description
The first volume, Equilibrium Concepts and Kinetics (ECK), examines fundamental principles of semiconductor energetics, interfacial charge transfer, basic concepts and methods of measurement and the properties of important classes of materials such as metal oxides and organic semiconductors. These materials and their properties are important in the operation of organic and perovskite solar cells either as the bulk absorber or as a selective contact structure. Electrolytic and solid ionic conductor properties also play relevant roles in organic and perovskite solar cells.
Contents
Introduction to Energy DevicesReferencesElectrostatic and Thermodynamic Potentials of Electrons in MaterialsElectrostatic PotentialEnergies of Free Electrons and HolesPotential Energy of the Electrons in the SemiconductorThe Vacuum LevelThe Fermi Level and the Work FunctionThe Chemical Potential of ElectronsPotential Step of a Dipole Layer or a Double LayerOrigin of Surface DipolesThe Volta PotentialEqualization of Fermi Levels of Two Electronic Conductors in ContactEquilibration of Metal Junctions and the Contact Potential DifferenceEquilibrium across the Semiconductor JunctionGeneral ReferencesReferencesVoltage, Capacitors, and BatteriesThe Voltage in the DeviceAnode and CathodeApplied Voltage and Potential DifferenceThe CapacitorMeasurement of the CapacitanceEnergy Storage in the CapacitorElectrochemical Systems: Structure of the Metal/Solution InterfaceElectrode Potential and Reference ElectrodesRedox Potential in Electrochemical CellsElectrochemical and Physical Scales of Electron Energy in Material SystemsChanges of Electrolyte Levels with pHPrinciples of Electrochemical BatteriesCapacity and Energy ContentPractical Electrochemical BatteriesLi-Ion BatteryGeneral referencesReferencesWork Functions and Injection BarriersInjection to Vacuum in Thermionic EmissionRichardson-Dushman EquationKelvin Probe MethodPhotoelectron Emission SpectroscopyInjection BarriersPinning of the Fermi Level and Charge Neutrality LevelGeneral ReferencesReferencesThermal Distribution of Electrons, Holes, and Ions in SolidsEquilibration of the Electrochemical Potential of ElectronsConfigurational Entropy of Weakly Interacting ParticlesEquilibrium Occupancy of Conduction Band and Valence Band StatesEquilibrium Fermi Level and the Carrier Number in SemiconductorsTransparent Conducting OxidesHot ElectronsScreeningThe Rectifier at Forward and Reverse VoltageSemiconductor Devices as Thermal Machines that Realize Useful WorkCell Potential in the Lithium Ion BatteryInsertion of Ions: The Lattice Gas ModelGeneral ReferencesReferencesInterfacial Kinetics and Hopping TransitionsDetailed Balance PrincipleForm of the Transition RatesKinetics of Localized States: Shockley-Read-Hall Recombination ModelReorganization Effects in Charge Transfer: the Marcus ModelPolaron HoppingRate of Electrode Reaction: Butler-Volmer EquationElectron Transfer at Metal-Semiconductor ContactElectron Transfer at Semiconductor/Electrolyte InterfaceGeneral ReferencesReferencesThe Chemical CapacitanceCarrier Accumulation and Energy Storage in the Chemical CapacitanceLocalized Electronic States in Disordered Materials and Surface StatesChemical Capacitance of a Single StateChemical Capacitance of a Broad DOSFilling a DOS with Carriers-The Voltage and the ConductivityChemical Capacitance of Li Intercalation MaterialsChemical Capacitance of GrapheneGeneral ReferencesReferencesThe Density of States in Disordered Inorganic and Organic ConductorsCapacitive and Reactive Current in Cyclic VoltammetryKinetic Effects in CV ResponseThe Exponential DOS in Amorphous SemiconductorsThe Exponential DOS in Nanocrystalline Metal OxidesBasic Properties of Organic LayersThe Gaussian DOSGeneral ReferencesReferencesPlanar and Nanostructured Semiconductor JunctionsStructure of the Schottky Barrier at a Metal/Semiconductor ContactChanges of the Schottky Barrier by the Applied VoltageProperties of the Planar Depletion LayerMott-Schottky PlotsCapacitance Response of Defect Levels and Surface StatesSemiconductor Electrodes and the Flatb and PotentialChanges of Redox Level and Band UnpinningInversion and Accumulation LayerHeterojunctionsEffect of Voltage on Highly Doped Nanocrystalline SemiconductorsHomogeneous Carrier Accumulation in Low-Doped Nanocrystalline SemiconductorsGeneral ReferencesReferencesAppendixIndex
