- ホーム
- > 洋書
- > 英文書
- > Science / Mathematics
Full Description
Ultraviolet LEDs and solar blind detectors represent the next frontier in solid state emitter technology, holding out the prospect of many major applications, including the identification of hazardous biological agents. The current work draws together leading researchers in UV semiconductor technology and systems applications. Topics covered include basic device issues, substrates, epitaxial growth, materials characterization, nitride quaternary alloys, doping, strain energy band engineering, quantum phosphors, ohmic contacts and Schottky barriers, UV LED device design and performance, thermal management, and applications such as hazardous agent sensing, solid state lighting, environmental control, and optical measurement.
Contents
Contributing Authors. Preface. Basic Device Issues in UV Solid-State Emitters and Detectors; M.S. Shur, A. ukauskas. HVPE-Grown AlN-GaN Based Structures for UV Spectral Region; A.S. Usikov, et al. GaN-Based Laser Diodes; S. Einfeldt, et al. Quaternary AlInGaN Materials System for UV Optoelectronics; E. Kuokstis, et al. III-Nitride Based UV Light Emitting Diodes; R. Gaska, et al. Uv Metal Semiconductor Metal Detectors; J.-L. Reverchon, et al. Characterization of Advanced Materials for Optoelectronics by Using UV Lasers and Four-Wave Mixing Techniques; K. Jara i nas. Quantum Phosphors; A.P. Vink, et al. Optical Measurements Using Light-Emitting Diodes; A. ukauskas, et al. Novel AlGaN Heterostructures for UV Sensors and LEDs; M. Stutzmann. Nitride Photodetectors in UV Biological Effects Studies; E. Munoz, et al. Promising Results of Plasma Assisted MBE for Optoelectronic Applications; A. Georgakilas, et al. Low Dislocations Density GaN/Sapphire for Optoelectronic Devices; B. Beaumont, et al. Stimulated Emission and Gain in GaN Epilayers Grown on Si; A.L. Gurskii, et al. Materials Characterization of Group-III Nitrides under High-Power Photoexcitation; S. Jur nas, et al. Small Internal Electric Fields in Quaternary InAlGaN Heterostructures; S. Anceau, et al. MOCVD Growth of AlGaN Epilayers and AlGaN/GaN SLs in a Wide Composition Range; W.V. Lundin, et al. Gallium Nitride Schottky Barriers and MSM UV Detectors; B. Boratynski, M. Tlaczala. III-Nitride Based Ultraviolet Surface Acoustic Wave Sensors; D. Ccaroniplys, et al. Optically Pumped InGaN/GaN/AlGaN MQW Laser Structures; V.Yu. Ivanov, et al. High Power LED and Thermal Management; A. Mahlkow. Detection of Blue Light by Self-Assembled Monolayer of Dipolar Molecules; O. Nielands, et al. Atomic and Molecular Spectroscopy with UV and Visible Superbright LEDs; G. Pichler, et al. Semi-Insulating GaN and its First Tests for Radiation Hardness as an Ionizing Radiation Detector; J.V. Vaitkus, et al. Towards the Hybrid Biosensors Based on Biocompatible Conducting Polymers; A. Ramanaviciene, A. Ramanavicius. Optically Pumped UV-Blue Lasers Based on InGaN/GaN/Al2O and InGaN/GaN/Si Heterostructures; G.P. Yablonskii, et al. Key Word Index. Author Index.
