- ホーム
- > 洋書
- > 英文書
- > Science / Mathematics
Full Description
Synthesizing experience from industry and academia, this book offers a comprehensive and nuanced perspective on the Physics of Electrostatic Discharge (ESD) phenomena in a range of semiconductor device technologies, illustrating robust design practices. Starting with fundamental insights into high-current ESD behaviour in semiconductor devices, it gradually builds toward practical design principles and real-world reliability challenges in advanced CMOS, FinFETs, GaN HEMTs, carbon nanostructures and TFT technologies. Device-level physics and practical design implications are explored throughout, bridging the gap between deep theoretical understanding and real-world design constraints. Including unique simulation techniques alongside experimental results, this book thoroughly explores core ESD design principles. Including multiple curated case studies, this book will equip readers with all the tools needed to address current ESD design challenges and embrace covers the challenges of the future. A reliable and thought-provoking exploration, ideal for graduate students, industry professionals and researchers working in device physics, design, and reliability.
Contents
Preface; 1. Introduction; 2. ESD characterization methods; 3. Process technology impact; 4. Design of ESD protection devices; High current ESD behaviour; 6. Advance IO ESD design; 7. ULSI CMOS technologies; 8. ESD basics of AIGaN/GaN HEMTs; 9. Basics of 1D/2D materials, thin film transistors and their ESD failures; 10. Challenges in novel packaging technologies.
