Tunneling Field Effect Transistors : Design, Modeling and Applications (Materials, Devices, and Circuits)

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Tunneling Field Effect Transistors : Design, Modeling and Applications (Materials, Devices, and Circuits)

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  • 製本 Paperback:紙装版/ペーパーバック版/ページ数 316 p.
  • 言語 ENG
  • 商品コード 9781032354699
  • DDC分類 621.3815284

Full Description

This book will give insight into emerging semiconductor devices from their applications in electronic circuits, which form the backbone of electronic equipment. It provides desired exposure to the ever-growing field of low-power electronic devices and their applications in nanoscale devices, memory design, and biosensing applications.

Tunneling Field Effect Transistors: Design, Modeling and Applications brings researchers and engineers from various disciplines of the VLSI domain to together tackle the emerging challenges in the field of nanoelectronics and applications of advanced low-power devices. The book begins by discussing the challenges of conventional CMOS technology from the perspective of low-power applications, and it also reviews the basic science and developments of subthreshold swing technology and recent advancements in the field. The authors discuss the impact of semiconductor materials and architecture designs on TFET devices and the performance and usage of FET devices in various domains such as nanoelectronics, Memory Devices, and biosensing applications. They also cover a variety of FET devices, such as MOSFETs and TFETs, with various structures based on the tunneling transport phenomenon.

The contents of the book have been designed and arranged in such a way that Electrical Engineering students, researchers in the field of nanodevices and device-circuit codesign, as well as industry professionals working in the domain of semiconductor devices, will find the material useful and easy to follow.

Contents

Chapter 1. Challenges of Conventional Cmos Technology in Perspective of Low Power Applications

Chapter 2. Basic Science and Development of Subthreshold Swing Technology

Chapter 3. Historical Development of MOS technology to Tunnel FETs

Chapter 4. Modeling of Gate Engineered TFETs: Challenges and Opportunities

Chapter 5. Modeling of Gate Engineered TFET: challenges and Opportunities.

Chapter 6. Evolution of Heterojunction Tunnel Field Effect Transistor and its Advantages

Chapter 7. Analog / RF performance analysis of TFET device

Chapter 8. DC Analysis and Analog/HF Performances of GAA-TFET with Dielectric Pocket

Chapter 9. Investigation on Ambipolar Current Suppression in Tunnel FETs

Chapter 10. Analysis of Channel Doping Variation on Transfer Characteristics to High Frequency performance of F-TFET

Chapter 11. Design of Nanotube TFET Biosensor

Chapter 12. TFET-based Memory Cell Design with Top-down Approach

Chapter 13. Designing of nonvolatile memories utilizing Tunnel Field Effect Transistor

Chapter 14. TFET-based Universal

Chapter 15. TFET-based Level Shifter Circuits for Low Power Applications

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