- ホーム
- > 洋書
- > 英文書
- > Science / Mathematics
Full Description
This book explores new experimental techniques and theoretical models to deepen an understanding of radiation effects and ion interaction processes in order to design materials for devices for the emerging quantum technology era.
Applications include tailored sensors that respond to ionizing radiation and other electromagnetic phenomena; sensors with high radiation hardness; and materials that contain specific engineered defects with desirable optical, magnetic, or electrical properties.
The chapters detail direct experimental investigations into the dynamics of radiation-induced defects, including their generation, annihilation, and transformation, on a time scale ranging from femto-seconds to seconds which requires a more detailed understanding to develop the potential of ion beams for the new technology era.
It will be a valuable reference for graduate students and researchers that employ ion beams and want to engage in quantum technologies. The book will also be of interest to scientists and engineers from industry that want to make use of ion beams in quantum technologies or learn more about the potential use of ion beams in the field.
Key Features:
• Provides a comprehensive introduction to this exciting and growing field of research.
• Up-to-date with the latest cutting-edge research and practical guidance for researchers and those in industry to apply to their work.
• Edited by established authorities, with chapter contributions from subject-area specialists.
Contents
Chapter 1: Introduction to Ion Beams and Quantum Technology. Chapter 2: Predictive Simulations of Electronic and Atomic Phenomena of Particle Radiation. Chapter 3: Introduction to Single Ion Techniques with Focused Ion Beams. Chapter 4: Quantum Communication and Sensing Based on Colour Centers in Wide-Bandgap Semiconductors. Chapter 5: Applications of Ion Irradiation for Thin-Film Oxides. Chapter 6: Single Implanted Ions for Qubits: Technology and Applications. Chapter 7: Dynamics of Radiation Effects in Silicon Studied with Pulsed Ion Beams and Ion Beam Induced Charge Collection.
