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Full Description
Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more powerful, cost-effective processors.
III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics covers recent progress in this area, addressing the two major revolutions occurring in the semiconductor industry: integration of compound semiconductors into Si microelectronics, and their fabrication on large-area Si substrates. The authors present a scientific and technological exploration of GaN, GaAs, and III-V compound semiconductor devices within Si microelectronics, building a fundamental foundation to help readers deal with relevant design and application issues.
Explores silicon-based CMOS applications developed within the cutting-edge DARPA program
Providing an overview of systems, devices, and their component materials, this book:
Describes structure, phase diagrams, and physical and chemical properties of III-V and Si materials, as well as integration challenges
Focuses on the key merits of GaN, including its importance in commercializing a new class of power diodes and transistors
Analyzes more traditional III-V materials, discussing their merits and drawbacks for device integration with Si microelectronics
Elucidates properties of III-V semiconductors and describes approaches to evaluate and characterize their attributes
Introduces novel technologies for the measurement and evaluation of material quality and device properties
Investi
Contents
Part I: Basic Physical and Chemical Properties Fundamentals and the Future of Semiconductor Device Technology. The Challenge of III-V Materials Integration with Si Microelectronics.
Part II: GaN and Related Alloys on Silicon Growth and Integration Techniques III-Nitrides on Si Substrate. New Technology Approaches.
Part III: III-V Materials and Device Integration Processes with Si Microelectronics Group III-A Nitrides on Si: Stress and Microstructural Evolution. Direct Growth of III-V Devices on Silicon. Optoelectronic Device Integrated on Si. Reliability of III-V Electronic Devices.
Part IV: Defect and Properties Evaluation and Characterization In Situ Curvature Measurements, Strains, and Stresses in the Case of Large Wafer Bending and Multilayer Systems. X-Ray Characterization of Group III-Nitrides. Luminescence in GaN.
Part V: Device Structures and Properties GaN-Based Optical Devices on Silicon. The Conventional III-V Materials and Devices on Silicon III-V Solar Cells on Silicon.
