FinFET/GAA Modeling for IC Simulation and Design : Using the BSIM-CMG Standard （2ND）

Chauhan, Yogesh Singh/ Hu, Chenming/ Salahuddin, S.

Academic Press Inc（2024/08発売）

• 製本 Paperback:紙装版/ペーパーバック版／ページ数 324 p.
• 言語 ENG
• 商品コード 9780323957298
• DDC分類 621.381528

Full Description

FinFET/GAA Modeling for IC Simulation and Design: Using the BSIM-CMG Standard, Second Edition is the first to book to explain FinFET modeling for IC simulation and the industry standard - BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, thus providing a step-by-step approach for the efficient extraction of model parameters.

With this book, users will learn Why you should use FinFET, The physics and operation of FinFET Details of the FinFET standard model (BSIM-CMG), Parameter extraction in BSIM-CMG FinFET circuit design and simulation, and more.

Contents

1. 3D thin-body FinFET and GAA: From device to compact model
2. Compact models for analog and RF applications
3. Core model for FinFETs
4. Gate-all-around FETs
5. Channel current and real device effects
6. Leakage currents
7. Charge, capacitance, and nonquasi-static effects
8. Parasitic resistances and capacitances
9. Noise
10. Junction diode I-V and C-V models
11. Benchmark tests for compact models
12. BSIM-CMG model parameter extraction
13. Temperature dependence
14. Cryogenic temperature modeling