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Full Description
Ultrawide Bandgap Semiconductors, Volume 107 in the Semiconductors and Semimetals series, highlights the latest breakthrough in fundamental science and technology development of ultrawide bandgap (UWBG) semiconductor materials and devices based on gallium oxide, aluminium nitride, boron nitride, and diamond. It includes important topics on the materials growth, characterization, and device applications of UWBG materials, where electronic, photonic, thermal and quantum properties are all thoroughly explored.
Contents
1. Fundamental technologies for gallium oxide transistors
Masataka Higashiwaki
2. Advanced concepts in Ga2O3 power and RF devices
Wenshen Li, Debdeep Jena and Huili Grace Xing
3. -(AlxGa(1-X))2O3 epitaxial growth, doping and transport
Nidhin Kurian Kalarickal and Siddharth Rajan
4. Thermal science and engineering of β-Ga2O3 materials and devices
Zhe Cheng, Jingjing Shi, Chao Yuan, Samuel Kim and Samuel Graham
5. Controlling different phases of gallium oxide for solar-blind photodetector application
Xiaolong Zhao, Mengfan Ding, Haiding Sun and Shibing Long
6. Nanoscale AlGaN and BN: Molecular beam epitaxy, properties, and device applications
Yuanpeng Wu, Ping Wang, Emmanouil Kioupakis and Zetian Mi
7. High-Al-content heterostructures and devices
Robert Kaplar, Albert Baca, Erica Douglas, Brianna Klein, Andrew Allerman, Mary Crawford and Shahed Reza
8. AlN nonlinear optics and integrated photonics
Xianwen Liu, Alexander W. Bruch and Hong. X. Tang
9. Material epitaxy of AlN thin films
Shangfeng Liu and Xinqiang Wang
10. Development of AlN integrated photonic platform for octave-spanning supercontinuum generation in visible spectrum
Hong Chen, Jingan Zhou, Houqiang Fu and Yuji Zhao
11. AlGaN-based thin-film ultraviolet laser diodes and light-emitting diodes
Haiding Sun, Feng Wu, Jiangnan Dai and Changqing Chen
12. Electrical transport properties of hexagonal boron nitride epilayers
Samuel Grenadier, Avisek Maity, Jing Li, Jingyu Lin and Hongxing Jiang
