Sic Materials and Devices: Volume 52 (Semiconductors and Semimetals") 〈52〉

Sic Materials and Devices: Volume 52 (Semiconductors and Semimetals") 〈52〉

  • オンデマンド(OD/POD)版です。キャンセルは承れません。
  • 製本 Hardcover:ハードカバー版/ページ数 420 p.
  • 言語 ENG
  • 商品コード 9780127521602
  • DDC分類 621.381

Full Description


This volume addresses the subject of materials science, specifically the materials aspects, device applications, and fabricating technology of SiC.

Contents

K. Jarrendahl and R.F. Davis, Materials Properties and Characterization of SiC. V.A. Dmitriev and M.G. Spencer, SiC Fabrication Technology: Growth and Doping. V. Saxena and A.J. Steckl, Silicon Carbide Materials and Devices. M. Shur, SiC Transistors. C.D. Brandt, R.C. Clarke, R.R. Siergiej, J.B. Casady, and A.W. Morse, SiC for Applications in High Power Electronics. R.J. Trew, SiC Microwave Devices. C. Carter, J. Edmond, H. Kong, G. Negley, M. Leonard, K. Doverspike, W. Weeks, A. Suvorov, and D. Waltz, SiC-Based UV Photodiodes and Light Emitting Diodes. H. Morkoc, Beyond Silicon Carbide! II-V Nitride Based Heterostructures and Devices. Subject Index.

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