Ferroelectricity in Doped Hafnium Oxide : Materials, Properties and Devices (Woodhead Publishing Series in Electronic and Optical Materials)

Schroeder, Uwe (EDT)/ Hwang, Cheol Seong (EDT)/ Funakubo, Hiroshi (EDT)

Woodhead Publishing Ltd（2019/03発売）

• 製本 Paperback:紙装版/ペーパーバック版／ページ数 570 p.
• 言語 ENG
• 商品コード 9780081024300
• DDC分類 548.85

Full Description

Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more.

Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized.

Contents

1. Fundamentals of Ferroelectric and piezoelectric properties
2. HfO2 processes
3. Dopant screening for optimization of the ferroelectric properties
4. Electrode screening for capacitor applications
5. Phase transition
6. Switching kinetics
7. Impact of oxygen vacancies
8. Epitaxial growth of ferroelectric HfO2
9. Thickness scaling Chapter
10. Simulation/Modelling
11. Structural characterization on a nanometer scale: PFM, TEM
12. Comparison to standard ferroelectric materials
13. FE HfO2 based devices