Nitride Semiconductor Light-Emitting Diodes (LEDs) : Materials, Technologies, and Applications (Woodhead Publishing Series in Electronic and Optical Materials) / Huang, Jian-Jang/ Kuo, Hao-chung/ Shen, Shyh-Chiang

Nitride Semiconductor Light-Emitting Diodes (LEDs) : Materials, Technologies, and Applications (Woodhead Publishing Series in Electronic and Optical Materials) （2ND）

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Nitride Semiconductor Light-Emitting Diodes (LEDs) : Materials, Technologies, and Applications (Woodhead Publishing Series in Electronic and Optical Materials) （2ND）

Huang, Jian-Jang/ Kuo, Hao-chung/ Shen, Shyh-Chiang

ウェブストア価格 ¥68,766（本体¥62,515）
Woodhead Publishing Ltd（2017/10発売）
外貨定価 US$ 330.00
ポイント 625pt

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製本 Paperback:紙装版/ペーパーバック版／ページ数 822 p.
言語 ENG
商品コード 9780081019429
DDC分類 621.381522

Full Description

Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies, and Applications, Second Edition reviews the fabrication, performance and applications of the technology, encompassing the state-of-the-art material and device development, along with considerations regarding nitride-based LED design. This updated edition is based on the latest research and advances, including two new chapters on LEDs for large displays and laser lighting. Chapters cover molecular beam epitaxy (MBE) growth of nitride semiconductors, modern metalorganic chemical vapor deposition (MOCVD) techniques, the growth of nitride-based materials, and gallium nitride (GaN)-on-sapphire and GaN-on-silicon technologies for LEDs. Nanostructured, non-polar and semi-polar nitride-based LEDs, as well as phosphor-coated nitride LEDs, are also discussed.

The book also addresses the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots. Further chapters discuss the development of LED encapsulation technology and fundamental efficiency droop issues in gallium indium nitride (GaInN) LEDs.

It is a technical resource for academics, physicists, materials scientists, electrical engineers, and those working in the lighting, consumer electronics, automotive, aviation, and communications sectors.

Part One Materials and fabrication
1. Molecular beam epitaxy (MBE) growth of nitride semiconductors
2. MOCVD growth of nitride semiconductors
3. GaN on sapphire substrates for visible light-emitting diodes
4. Gallium nitride (GaN) on silicon substrates for LEDs
5. Phosphors for white LEDs
6. Recent development of fabrication technologies of nitride LEDs for performance improvement
7. Nanostructured LED
8. Nonpolar and semipolar LEDs

Part Two Performance of nitride LEDs
9. Efficiency droop in GaInN/GaN LEDs
10. Photonic crystal nitride LEDs
11. Nitride LEDs based on quantum wells and quantum dots
12. Colour tuneable LEDs and pixelated micro-LED arrays
13. Reliability of nitride LEDs
14. Physical mechanisms limiting the performance and the reliability of GaN-based LEDs
15. Chip packaging: encapsulation of nitride LEDs

Part Three Applications of nitride LEDs
16. White LEDs for lighting applications
17. Ultraviolet LEDs
18. Infrared emitters using III-nitride semiconductors
19. LEDs for liquid crystal display (LCD) backlighting
20. LEDs and automotive lighting applications
21. LEDs for large displays
22. LEDs for projectors