Ferroelectric-Gate Field Effect Transistor Memories : Device Physics and Applications (Topics in Applied Physics) (2ND)
  • 洋書

Ferroelectric-Gate Field Effect Transistor Memories : Device Physics and Applications (Topics in Applied Physics) (2ND)  Paperback,  言語:ENG

Park, Byung-Eun (EDT)/ Ishiwara, Hiroshi (EDT)/ Okuyama, Masanori (EDT)

  • ウェブストア価格 ¥38,055(本体¥34,596)
  • Springer Verlag, Singapore(2021/03発売)
  • ポイント 345pt
  • 海外取次在庫
Ferroelectric-Gate Field Effect Transistor Memories : Device Physics and Applications (Topics in Applied Physics) (2ND)
  • 洋書
  • 電子版あり

Ferroelectric-Gate Field Effect Transistor Memories : Device Physics and Applications (Topics in Applied Physics) (2ND)  Hardcover,  言語:ENG

Park, Byung-Eun (EDT)/ Ishiwara, Hiroshi (EDT)/ Okuyama, Masanori (EDT)

  • ウェブストア価格 ¥37,062(本体¥33,693)
  • Springer Verlag, Singapore(2020/03発売)
  • ポイント 336pt
  • 海外からお取り寄せ(通常6~9週間)
Ferroelectric-Gate Field Effect Transistor Memories : Device Physics and Applications (Topics in Applied Physics)
  • 洋書

Ferroelectric-Gate Field Effect Transistor Memories : Device Physics and Applications (Topics in Applied Physics)  Paperback,  言語:ENG

Park, Byung-Eun (EDT)/ Ishiwara, Hiroshi (EDT)/ Okuyama, Masanori (EDT)

  • ウェブストア価格 ¥40,151(本体¥36,501)
  • Springer(2018/06発売)
  • ポイント 365pt
  • 海外からお取り寄せ(通常6~9週間)