Description
Starting with the simplest semiclassical approaches and ending with the description of complex fully quantum-mechanical methods for quantum transport analysis of state-of-the-art devices, Computational Electronics: Semiclassical and Quantum Device Modeling and Simulation provides a comprehensive overview of the essential techniques and methods for effectively analyzing transport in semiconductor devices.
With the transistor reaching its limits and new device designs and paradigms of operation being explored, this timely resource delivers the simulation methods needed to properly model state-of-the-art nanoscale devices. The first part examines semiclassical transport methods, including drift-diffusion, hydrodynamic, and Monte Carlo methods for solving the Boltzmann transport equation. Details regarding numerical implementation and sample codes are provided as templates for sophisticated simulation software.
The second part introduces the density gradient method, quantum hydrodynamics, and the concept of effective potentials used to account for quantum-mechanical space quantization effects in particle-based simulators. Highlighting the need for quantum transport approaches, it describes various quantum effects that appear in current and future devices being mass-produced or fabricated as a proof of concept. In this context, it introduces the concept of effective potential used to approximately include quantum-mechanical space-quantization effects within the semiclassical particle-based device simulation scheme.
Addressing the practical aspects of computational electronics, this authoritative resource concludes by addressing some of the open questions related to quantum transport not covered in most books. Complete with self-study problems and numerous examples throughout, this book supplies readers with the practical understanding required to create their own simulators.
Table of Contents
Introduction to Computational Electronics
Si-Based Nanoelectronics
Heterostructure Devices in III–V or II–VI Technology
Modeling of Nanoscale Devices
The Content of This Book
Introductory Concepts
Crystal Structure
Semiconductors
Band Structure
Preparation of Semiconductor Materials
Effective Mass
Density of States
Electron Mobility
Semiconductor Statistics
Semiconductor Devices
Semiclassical Transport Theory
Approximations for the Distribution Function
Boltzmann Transport Equation
Relaxation-Time Approximation
Rode’s Iterative Method
Scattering Mechanisms: Brief Description
Implementation of the Rode Method for 6H-SiC Mobility Calculation
The Drift-Diffusion Equations and Their Numerical Solution
Drift-Diffusion Model Derivation
Drift-Diffusion Application Example
Hydrodynamic Modeling
Introduction
Extensions of the Drift-Diffusion Model
Stratton’s Approach
Hydrodynamic (Balance, Bløtekjær) Equations Model
The Need for Commercial Semiconductor Device Modeling Tools
State-of-the-Art Commercial Packages
The Advantages and Disadvantages of Hydrodynamic Models: Simulations of Different Generation FD SOI Devices
Particle-Based Device Simulation Methods
Direct Solution of Boltzmann Transport Equation: Monte Carlo Method
Multi-Carrier Effects
Device Simulations
Coulomb Force Treatment within a Particle-Based Device Simulation Scheme
Representative Simulation Results of Multiparticle and Discrete Impurity Effects
Modeling Thermal Effects in Nano-Devices
Some General Aspects of Heat Conduction
Classical Heat Conduction in Solids
Form of the Heat Source Term
Modeling Heating Effects with Commercial Simulation Packages
The ASU Particle-Based Approach to Lattice Heating in Nanoscale Devices
Open Problems
Quantum Corrections to Semiclassical Approaches
One-Dimensional Quantum-Mechanical Space Quantization
Quantum Corrections to Drift-Diffusion and Hydrodynamic Simulators
The Effective Potential Approach in Conjunction with Particle-Based Simulations
Description of Gate Current Models Used in Device Simulations
Monte Carlo—k _ p—1D Schrödinger Solver for Modeling Transport in p-Channel Strained SiGe Devices
Quantum Transport in Semiconductor Systems
Tunneling
General Notation
Transfer Matrix Approach
Landauer Formula and Usuki Method
Far-From-Equilibrium Quantum Transport
Mixed States and Distribution Function
Irreversible Processes and MASTER Equations
The Wigner Distribution Function
Green’s Functions
Nonequilibrium Keldysh Green’s Functions
Low Field Transport in Strained-Si Inversion Layers
NEGF in a Quasi-1D Formulation
Quantum Transport in 1D—Resonant Tunneling Diodes
Coherent High-Field Transport in 2D and 3D
Conclusions
Appendix A: Electronic Band Structure Calculation
Appendix B: Poisson Equation Solvers
Appendix C: Computational Electromagnetics
Appendix D: Stationary and Time-Dependent Perturbation Theory
Each chapter concludes with "Problems" and "References"
