Description
Volume IIIA Basic Techniques
Handbook of Crystal Growth, Second Edition Volume IIIA (Basic Techniques), edited by chemical and biological engineering expert Thomas F. Kuech, presents the underpinning science and technology associated with epitaxial growth as well as highlighting many of the chief and burgeoning areas for epitaxial growth. Volume IIIA focuses on major growth techniques which are used both in the scientific investigation of crystal growth processes and commercial development of advanced epitaxial structures. Techniques based on vacuum deposition, vapor phase epitaxy, and liquid and solid phase epitaxy are presented along with new techniques for the development of three-dimensional nano-and micro-structures.
Volume IIIB Materials, Processes, and Technology
Handbook of Crystal Growth, Second Edition Volume IIIB (Materials, Processes, and Technology), edited by chemical and biological engineering expert Thomas F. Kuech, describes both specific techniques for epitaxial growth as well as an array of materials-specific growth processes. The volume begins by presenting variations on epitaxial growth process where the kinetic processes are used to develop new types of materials at low temperatures. Optical and physical characterizations of epitaxial films are discussed for both in situ and exit to characterization of epitaxial materials. The remainder of the volume presents both the epitaxial growth processes associated with key technology materials as well as unique structures such as monolayer and two dimensional materials.
Volume IIIA Basic Techniques
- Provides an introduction to the chief epitaxial growth processes and the underpinning scientific concepts used to understand and develop new processes.
- Presents new techniques and technologies for the development of three-dimensional structures such as quantum dots, nano-wires, rods and patterned growth
- Introduces and utilizes basic concepts of thermodynamics, transport, and a wide cross-section of kinetic processes which form the atomic level text of growth process
Volume IIIB Materials, Processes, and Technology
- Describes atomic level epitaxial deposition and other low temperature growth techniques
- Presents both the development of thermal and lattice mismatched streams as the techniques used to characterize the structural properties of these materials
- Presents in-depth discussion of the epitaxial growth techniques associated with silicone silicone-based materials, compound semiconductors, semiconducting nitrides, and refractory materials
Table of Contents
Volume 3A
1: Epitaxy for Energy applications
2: Hydride Vapor Phase Epitaxy
3: The principles and practice of organometallic vapor phase epitaxy
4: Principles of molecular beam epitaxy (Si or IIIV)
5: Molecular beam epitaxy with gaseous source
6: Liquid phase epitaxy
7: Solid phase epitaxy
8: Pulsed laser deposition
9: Nanowire growth (VLS or VSS)
10: Selective area masked growth (nano-to-micro)
11: Templated growth and van der walls epitaxy graphoepitaxy
12: Epitaxial small organic molecules
13: Oxide thin films
14: Epitaxy of carbon-based materials: diamond thinfilm
15: Magnetic Semiconductors
16: MOVPE of Nitrides (LEO)
17: MBE of nitrides
18: Graphene
19: Chemical Vapor Deposition of Two-Dimensional Crystals
Volume 3B
1: Kinetic processes in vapour phase epitaxy
2: Organometallic vapor phase epitaxy reaction chemical kinetics
3: Transport phenomena in vapor phase epitaxy reactors
4: Nucleation and surface diffusion in molecular beam epitaxy
5: Film stress and mechanics in thin film epitaxy
6: Low Temperature and Metamorphic buffer layers
7: Self-assembly in Epitaxial growth
8: "Atomic layer or Modulated Epitaxial Growth Techniques"
9: Epitaxial Growth of SiC
10: In situ optical studies of epitaxial growth
11: X-ray and electron diffraction
12: Growth of III-V’s on Silicon:nitrides and arsenides
13: Si and Si-based alloy epitaxy
