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Full Description
Frontiers in Electronics is divided into four sections: advanced terahertz and photonics devices; silicon and germanium on insulator and advanced CMOS and MOSHFETs; nanomaterials and nanodevices; and wide band gap technology for high power and UV photonics. This book will be useful for nano-microelectronics scientists, engineers, and visionary research leaders. It is also recommended to graduate students working at the frontiers of the nanoelectronics and microscience.
Contents
Silicon Finfets as Detectors of Terahertz and Sub-Terahertz Radiation, (W Stillman, C Donais, S Rumyantsev and M Shur); WDM Demultiplexing by Using Surface Plasmon Polaritons (D K Mynbaev and V Sukharenko); Low-Power Biomedical Signal Monitoring System for Implantable Sensor Applications (M R Haider, J Holleman, S Mostafa and S K Islam); Electron Heating in Quantum-Dot Structures with Collective Potential Barriers (L H Chien, A Sergeev, N Vagidov, V Mitin and S Birner); Electronic Structure of Graphene Nanoribbons Subjected to Twist and Nonuniform Strain (A Dobrinsky, A Sadrzadeh, B I Yakobson and J Xu); ZnO Nanocrystalline High Performance Thin Film Transistors (B Bayraktaroglu, K Leedy and R Neidhard); Zinc Oxide Nanoparticles for Ultraviolet Photodetection (S Sawyer, L Qin and C Shing); Bandgap Engineering in MBE Grown Al(1-x)GaxN Epitaxial Columnar Nanostructures (J Wu, R Palai, W M Jadwisienczak and M Shur); Novel Approaches to Microwave Switching Devices Using Nitride Technology (G Simin, J Wang, B Khan, J Yang, A Sattu, R Gaska and M Shur); and other papers.
