NAND型フラッシュメモリ<br>Inside NAND Flash Memories

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NAND型フラッシュメモリ
Inside NAND Flash Memories

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  • 製本 Hardcover:ハードカバー版/ページ数 600 p.
  • 言語 ENG
  • 商品コード 9789048194308
  • DDC分類 621

基本説明

Features - Flash NAND design; NAND – SSD co-development; Radiation effects on Flash memories; Charge trap technology overview.

Full Description

Digital photography, MP3, digital video, etc. make extensive use of NAND-based Flash cards as storage media.
To realize how much NAND Flash memories pervade every aspect of our life, just imagine how our recent habits would change if the NAND memories suddenly disappeared. To take a picture it would be necessary to find a film (as well as a traditional camera...), disks or even magnetic tapes would be used to record a video or to listen a song, and a cellular phone would return to be a simple mean of communication rather than a multimedia console.
The development of NAND Flash memories will not be set down on the mere evolution of personal entertainment systems since a new killer application can trigger a further success: the replacement of Hard Disk Drives (HDDs) with Solid State Drives (SSDs).
SSD is made up by a microcontroller and several NANDs. As NAND is the technology driver for IC circuits, Flash designers and technologists have to deal with a lot of challenges. Therefore, SSD (system) developers must understand Flash technology in order to exploit its benefits and countermeasure its weaknesses.
Inside NAND Flash Memories is a comprehensive guide of the NAND world: from circuits design (analog and digital) to Flash reliability (including radiation effects), from testing issues to high-performance (DDR) interface, from error correction codes to NAND applications like Flash cards and SSDs.

Contents

Preface. Acknowledgements. 1 Market and applications for NAND flash memories; Gregory Wong. 2 NAND overview: from memory to systems; R. Micheloni, A. Marelli and S. Commodaro. 3 Program and erase of NAND memory arrays; Cristoph Friederich. 4 Reliability issues of NAND flash memories; C. Zambelli, A. Chimenton and P. Olivo. 5 Charge trap NAND technologies ; Alessandro Grossi. 6 Control logic; A. Marelli, R. Micheloni and R. Ravasio. 7 NAND DDR interface; Andrea Silvagni. 8 Sensing circuits; L. Crippa and R. Micheloni. 9 Parasitic effects and verify circuits; L. Crippa and R. Micheloni. 10 MLC storage; L. Crippa and R. Micheloni. 11 Charge pumps, voltage regulators and HV switches; R. Micheloni and L. Crippa. 12 High voltage overview; R. Micheloni and A. Marelli. 13 Redundancy; A. Marelli and R. Micheloni . 14 Error correction codes; T. Zhang, A. Marelli and R. Micheloni. 15 NAND design for testability and testing; Andrea Silvagni. 16 XLC storage; R. Micheloni and L. Crippa. 17 Flash cards; A. Ghilardelli and S. Corno. 18 Low power 3D-integrated SSD; K. Takeuchi. 19 Radiation effects on NAND Flash memories; M. Bagatin, G. Cellere, S. Gerardin and A. Paccagnella. About the authors. Index.

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