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Full Description
The issues addressed by the Sixth International Symposium on the Ultra Clean Processing of Silicon Surfaces included all aspects of ultra-clean Si-technology, cleaning and contamination control in both front-end-of-line (FEOL) and back-end-of-line (BEOL) processing.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
This covered studies of Si-surface chemistry and topography and its relationship to device performance and process yield, cleaning in relationship to new gate stacks, cleaning at the interconnect level, resist stripping and polymer removal, cleaning and contamination control of various new materials, wafer backside cleaning and cleaning following Chemical-Mechanical-Polishing (CMP).
Contents
Future Challenges for Cleaning in Advanced Microelectronics
Open Circuit Potential Analysis as a Fast Screening Method for the Quality of High-k Dielectric Layers
Wet Etch Enhancement of HfO2 Films by Implant Processing
Behaviour of High-k Dielectric Materials with Classical Cleaning Chemistries
Introduction of High-k Materials into Wet Processing, Analysis and Behavior
Metallic Impurity Contamination from Tungsten Gate Cleaning
Single Chemistry Cleaning Solutions for Advanced Wafer Cleaning
Single Chemistry Cleaning with Complexing Agents (CAs): Determination of CA-Lifetimes by UV/VIS-Spectroscopy
Complexing Agents Employed in Single Chemistry Cleaning: Stability Studies Using HPLC
Stability and Residue Studies of Complexing Agents in SC-1 Bath
Single Wafer Immersion Process Incorporating a Novel Megasonics Configuration with an Advanced IPA Vapor Condensation Dry
Metallic Contamination Removal Evaluation for Single Wafer Processing
Procedure to Evaluate Particle-Substrate Interaction during Immersion in Liquid
Surfactant Selection for AM Clean in a Single Wafer Oasis Wet System
Investigating Post CMP Cleaning Processes for STI Ceria Slurries
Long-Term Effect of Transportation on Particle Concentrations in Various Process Chemicals
A New Industrial Etching & Drying Process for MEMS to Prevent Collapse of Microstructures
In Situ SymflowTM Etching in an STG® Dryer
High Uniformity Wet Processing for Qxide Thinning and Polymer Cleaning Applications
Wet Oxide Etching of Dual Gate Oxide for 0.13μm Technologies and Beyond: Interaction with Photoresist and Equipment
A Novel Instrumentation for Contamination and Deposition Control on 300 mm Silicon Wafers Employing Synchrotron Radiation Based TXRF and EDXRF Analysis
Relation between Surface Contamination of Metals and Defect Formation in Si during Oxidation of Bulk- and SOI-Wafers
Evaluation of Ultratrace Metallic Elements in Poly-SiGe Thin Films
Effect of Additives on the Removal Efficiency of Photoresist by Ozone/DI-Water Processes: Experimental Study
Organic Contamination: Purge Gas Impact in Plastic Storage Boxes
Formation of Time-Dependent Haze on Silicon Wafers
Compatibility of Supercritical Co2-Based Stripping with Porous Ultra Low-k Materials and Copper
BEOL Post Ash Residue Removal Using DSP* Chemistry in an FSI Batch Spray Tool
Backside Cleaning for Copper Removal
Evaluation of Organic Contamination on Si Wafers in Fab Environments
Selective Wet Etching of High-k Gate Dielectrics
Investigation of Particle Removal from Silicon Surfaces by Means of Dry and Steam Laser Cleaning
A Comprehensive Model for Cleaning Semiconductor Wafers
Effect of Transient pH on Particle Deposition during Immersion Rinsing
Influence of Hardware and Chemistry on the Removal of Nano-Particles in a Megasonic Cleaning Tank
Influence of Frequency on the Removal Efficiency of Nano-Particles in a Megasonic Spray Cleaning Tool
A Theoretical and Experimental Study of Damage-Free BEOL Cleaning with Megasonic Agitation
Removal of Small (<100-nm) Particles and Metal Contamination in Single-Wafer Cleaning Tool
Relation between Particle Density and Haze on a Wafer: a New Approach to Measuring Nano-Sized Particles
TXRF Analysis of Low Z Elements and TXRF-NEXAFS Speciation of Organic Contaminants on Silicon Wafer Surfaces Excited by Monochromatized Undulator Radiation
Forced Vapour-Phase Decomposition (FVPD) in Combination with e.g. TXRF - a Method to Determine Contamination in Silicon
On-Tool Real-Time Moisture Monitoring Provides Yield and Productivity Benefits
Effect of Preparation-Induced Surface Morphology on the Stability of H-Terminated Si(111) and Si(100) Surfaces
Thermal Evolution of (100) Silicon and Chemical Oxides as Seen by ATR Spectroscopy
Modelling the Growth of Chemical Oxide for Advanced Surface Preparation
Wafer Surface Preparation Requirements for Next-Generation Devices
Cleaning of Si Surfaces by Lamp Illumination
Defect-Free Si Thinning by In Situ HCI Vapour Etching
Advanced Cylindrical Capacitor Formation Using Gas-Phase Selective Etching
Gas-Phase HF/Vapor Etching of Thermal Silicon Dioxide Films
Electrochemical Impedance Spectroscopic Characterization of Hydrophobic Coatings Deposited onto Pre-Oxidized Silicon
Can we Increase the Effiency of Organic Contamination Removal by Ozone/DI-Water Processes by Using Additives?
New Residue Removal Method Using Ozonated Water with Phosphoric Acid
Ozone-Gas Concentration Measurements for Photoresist Stripping
Accelerated Removal of Photoresist for Semiconductor Production by an Increased-Pressure Ozone and Water Vapor Process
Novel Photoresist Removal Using Atomic Hydrogen Generated by Heated Catalyzer
'Resist / Wet Etch' Couple for Dual Gate Oxide
New Contact Cleaning in HF & N2/H2 Microwave Plasma
Cleaning after Contact Etching of Multi-Film Stack and Cobalt Disilicide: An XPS Study
Alternative Post-Etch Polymer Removal in a Single-Wafer Platform
Ammonium Nitrate Cleaning Process for Post Metal Photo-Resister Removing
Post Metal Etch Polymer Removal: A New CF4-Based Dry Plasma Process Sequence
Influences of Cleaning Conditions and Elapse after Etch on Via Resistance in Multi-Level Cu Interconnects
Post-Etch Cleaning Chemistries Evaluation for Low k-Copper Integration
Resist Strip and Cu Diffusion Barrier Etch in Cu BEOL Integration Schemes in a Mattson HighlandsTM Chamber
Corrosion Inhibaitors for Copper in Hydroxylamine-Based Chemistries Used for CMP and Post-CMP Cleaning
Tribological Characterization of Post-CMP Brush Scrubbbing
Defectivity Study of Cu Metallization Process by Dark- and Bright-Field Inspection
New Dry Tool after Cleaning of Low-k Dielectrics
Supercritical Carbon Dioxide Processing of Porous Methylsilsesquioxane(PMSQ) Low-k Dielectric Films
Supercritical Carbon Dioxide Cleaning of Low-k Material
Removal of Heavy Organics by Supercritical CO2
