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Description
(Text)
Emerging non-volatile universal memory technology is vital for providing the huge storage capabilities required by the nano-computing facilities. The recently found memristor, "the missing fourth circuit element", is a potential candidate for the next-generation memory and has received extra attention in the last few years. In this book, a literature review of different physical realizations of the memristor is discussed. Following that, a comparison between two of the most promising physical realizations is conducted. Besides, memristor-based memory Read/Write circuit design considerations are demonstrated. Current literatures show destructive reading issue when using the memristor as a memory element. This work is targeting at solving this issue by providing three novel Read/Write circuit designs to facilitate the reading and writing operation of the memristor device. The proposed circuits exhibit lower power consumption and less delay when compared to recently published Read/Write circuits. In addition, two of the proposed circuits have the advantage of non-destructive successive reading cycles capability as well as occupying small layout area.
(Author portrait)
Elshamy, MohamedMohamed Elshamy, Hassan Mostafa, and M. Sameh Said are with Cairo University, Cairo, Egypt. Hassan Mostafa is with the Center for Nanoelectronics and Devices (CND) at Zewail City for Science and Technology and the American University in Cairo.
