GaP Heteroepitaxy on Si(100) : Benchmarking Surface Signals when Growing GaP on Si in CVD Ambients (Springer Theses)

Döscher, Henning

Springer International Publishing AG（2016/09発売）

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製本 Paperback:紙装版/ペーパーバック版／ページ数 143 p.
商品コード 9783319379555

Full Description

Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The hydrogen-based process ambient enables the preparation of anomalous double-layer step structures on Si(100), highly beneficial for subsequent III-V integration.