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Full Description
This book presents a comprehensive treatise on the extraction of semiconductor diode parameters using various methods. Its focus is on metal-semiconductor, metal-insulator-semiconductor, and p-n junction diodes, covering a wide range of metals and semiconductors, including elemental, compound, organic, and nanostructured materials. By bringing together these methods in one place, this book provides a much-needed standardized point of reference for the field.
The methods used for device characterization have spread widely but not yet critically compared and contrasted. This book aims to bridge this gap by offering a comparative review of the methods and providing the most accurate information on current developments. The result is a valuable resource for researchers and practitioners who seek to optimize their use of semiconductor diodes in their work.
With its thorough coverage and critical analysis, this book fills a large void in the field of semiconductor device characterization. It is an essential reference for anyone interested in the extraction of semiconductor diode parameters using a variety of methods.
Contents
Determining p-n Junction Band Gap.- Review of Metal-Semiconductor Junctions.- Contemporary Parameter Extraction Methods.- Transient Methods.- New Parameter Extraction Techniques.- p-n Diode Parameter Extraction.- Novel Unified Method.- Artifical Intelligence Parameter Extraction Methods.
