SiC Power Module Design : Performance, robustness and reliability (Energy Engineering)

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SiC Power Module Design : Performance, robustness and reliability (Energy Engineering)

Castellazzi, Alberto (EDT)/ Irace, Andrea (EDT)

ウェブストア価格 ¥28,384（本体¥25,804）
Institution of Engineering and Technology（2022/02発売）
外貨定価 US$ 160.00
ポイント 258pt

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製本 Hardcover:ハードカバー版／ページ数 360 p.
言語 ENG
商品コード 9781785619076
DDC分類 621.38152

Full Description

High-frequency switching power semiconductor devices are at the heart of power electronic converters. To date, these devices have been dominated by the well-established silicon (Si) technology. However, their intrinsic physical limits are becoming a barrier to achieving higher performance power conversion. Wide Bandgap (WBG) semiconductor devices offer the potential for higher efficiency, smaller size, lighter weight, and/or longer lifetime. Applications in power grid electronics as well as in electromobility are on the rise, but a number of technological bottle-necks need to be overcome if applications are to become more widespread - particularly packaging.

This book describes the development of advanced multi-chip packaging solutions for novel WBG semiconductors, specifically silicon carbide (SiC) power MOSFETs.

Coverage includes an introduction; multi-chip power modules; module design and transfer to SiC technology; electrothermal, thermo-mechanical, statistical and electromagnetic aspects of optimum module design; high temperature capable SiC power modules; validation technologies; degradation monitoring; and emerging packaging technologies. The book is a valuable reference for researchers and experts in academia and industry.

Chapter 1: SiC power MOSFETs and their application
Chapter 2: Anatomy of a multi-chip power module
Chapter 3: Established module design and transfer to SiC technology
Chapter 4: Temperature-dependent modeling of SiC power MOSFETs for within- and out-of-SOA simulations
Chapter 5: Optimum module design I: electrothermal
Chapter 6: Optimum module design II: impact of parameter design spread
Chapter 7: Optimum module design III: electromagnetic
Chapter 8: Power module lifetime evaluation methodologies
Chapter 9: High-temperature capable SiC power modules by Ag sintering on various metal interfaces
Chapter 10: Advanced die-attach validation technologies
Chapter 11: Power module degradation monitoring
Chapter 12: Advanced thermal management solutions
Chapter 13: Emerging packaging concepts and technologies