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Full Description
Although existing nanometer CMOS technology is expected to remain dominant for the next decade, new non-classical devices are being developed as the potential replacements of silicon CMOS, in order to meet the ever-present demand for faster, smaller, more efficient integrate circuits.
Many new devices are based on novel emerging materials such as one-dimensional carbon nanotubes and two-dimensional graphene, non-graphene two-dimensional materials, and transition metal dichalcogenides. Such devices use on/off operations based on quantum mechanical current transport, and so their design and fabrication require an understanding of the electronic structures of materials and technologies. Moreover, new electronic design automation (EDA) tools and techniques need to be developed based on integrating devices from emerging novel material-based technologies.
The aim of this book is to explore the materials and design requirements of these emerging integrated circuit technologies, and to outline their prospective applications. It will be useful for academics and research scientists interested in future directions and developments in design, materials and applications of novel integrated circuit technologies, and for research and development professionals working at the cutting edge of integrated circuit development.
Contents
Chapter 1: Graphene and other than graphene materials technology and beyond
Chapter 2: Emerging graphene-compatible biomaterials
Chapter 3: Single electron devices: concept to realization
Chapter 4: Application of density functional theory (DFT) for emerging materials and interconnects
Chapter 5: Memristor devices and memristor-based circuits
Chapter 6: Organic-inorganic heterojunctions for optoelectronic applications
Chapter 7: Emerging high-κ dielectrics for nanometer CMOS technologies and memory devices
Chapter 8: Technology and modeling of DNTT organic thin-film transistors
Chapter 9: Doping-free tunnelling transistors - technology and modelling
Chapter 10: Tunnel junctions to tunnel field-effect transistors - technologies, current transport models, and integration
Chapter 11: Low-dimension materials-based interlayer tunnel field-effect transistors: technologies, current transport models, and integration
Chapter 12: Molybdenum disulfide-boron nitride junctionless tunnel effect transistor
