Advanced High Voltage Power Device Concepts （2012）

Baliga, B. Jayant

Springer-Verlag New York Inc.（2014/12発売）

• 製本 Paperback:紙装版/ペーパーバック版／ページ数 568 p.
• 言語 ENG
• 商品コード 9781493901326
• DDC分類 621

Full Description

The devices described in "Advanced MOS-Gated Thyristor Concepts" are utilized in microelectronics production equipment, in power transmission equipment, and for very high power motor control in electric trains, steel-mills, etc. Advanced concepts that enable improving the performance of power thyristors are discussed here, along with devices with blocking voltage capabilities of 5,000-V, 10,000-V and 15,000-V. Throughout the book, analytical models are generated to allow a simple analysis of the structures and to obtain insight into the underlying physics. The results of two-dimensional simulations are provided to corroborate the analytical models and give greater insight into the device operation.

Contents

1 Introduction.- 2 Silicon Thyristors.- 3 Silicon Carbide Thyristors.- 4 Silicon GTO.- 5 Silicon IGBT.- 6 SiC Planar MOSFET Structures.- 7 Silicon Carbide IGBT.- 8 Silicon MCT.- 9 Silicon BRT.- 10 Silicon EST.- 11 Synopsis.