- ホーム
- > 洋書
- > 英文書
- > Science / Mathematics
Full Description
This book is a comprehensive text on the physics of semiconductors and nanostructures for a large spectrum of students at the final undergraduate level studying physics, material science and electronics engineering. It offers introductory and advanced courses on solid state and semiconductor physics on one hand and the physics of low dimensional semiconductor structures on the other in a single text book.
Key Features
Presents basic concepts of quantum theory, solid state physics, semiconductors, and quantum nanostructures such as quantum well, quantum wire, quantum dot and superlattice
In depth description of semiconductor heterojunctions, lattice strain and modulation doping technique
Covers transport in nanostructures under an electric and magnetic field with the topics: quantized conductance, Coulomb blockade, and integer and fractional quantum Hall effect
Presents the optical processes in nanostructures under a magnetic field
Includes illustrative problems with hints for solutions in each chapter
Physics of Semiconductors and Nanostructures will be helpful to students initiating PhD work in the field of semiconductor nanostructures and devices. It follows a unique tutorial approach meeting the requirements of students who find learning the concepts difficult and want to study from a physical perspective.
Contents
Preface
Organization of the Book
Acknowledgments
Authors
1 Crystalline Structure of Different Semiconductors
2 Quantum Theory, Energy Bands of Solids, Effective Mass, and Holes
3 Physics of Semiconductors
4 Transport Phenomena in Semiconductors
5 Low-Dimensional Semiconductors
6 Semiconductor Heterojunctions, Modulation-Doped Quantum Wells, and Superlattices
7 Transport Phenomena in Quantum Nanostructures under an Electric Field
8 Effect of Magnetic Field on the Transport Phenomena in Quantum Nanostructures
9 Optical Properties of Quantum Nanostructures
Appendix A.1: Some Fundamental Physical Constants
Appendix A.2: Some Important Parameters of Germanium, Silicon, and Gallium Arsenide at T = 300 K
Index
