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Full Description
Presenting the cutting-edge results of new device developments and circuit implementations, High-Speed Devices and Circuits with THz Applications covers the recent advancements of nano devices for terahertz (THz) applications and the latest high-speed data rate connectivity technologies from system design to integrated circuit (IC) design, providing relevant standard activities and technical specifications. Featuring the contributions of leading experts from industry and academia, this pivotal work:
Discusses THz sensing and imaging devices based on nano devices and materials
Describes silicon on insulator (SOI) multigate nanowire field-effect transistors (FETs)
Explains the theory underpinning nanoscale nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs), simulation methods, and their results
Explores the physics of the silicon-germanium (SiGe) heterojunction bipolar transistor (HBT), as well as commercially available SiGe HBT devices and their applications
Details aspects of THz IC design using standard silicon (Si) complementary metal-oxide-semiconductor (CMOS) devices, including experimental setups for measurements, detection methods, and more
An essential text for the future of high-frequency engineering, High-Speed Devices and Circuits with THz Applications offers valuable insight into emerging technologies and product possibilities that are attractive in terms of mass production and compatibility with current manufacturing facilities.
Contents
Terahertz Technology based on Nanoelectronic Devices. Ultimate FDSOI Multigate MOSFETs and Multibarrier Boosted Gate Resonant Tunneling FETs for a New High-Performance Low-Power Paradigm. SiGe BiCMOS Technology and Devices. SiGe HBT Technology and Circuits for THz Applications. Multiwavelength Sub-THz Sensor Array with Integrated Lock-In Amplifier and Signal Processing in 90 nm CMOS Technology. 40/100 GbE Physical Layer Connectivity for Servers and Data Centers. Equalization and Multilevel Modulation for Multi-Gbps Chip-to-Chip Links. 25 G/40 G CMOS SerDes: Need, Architecture, and Implementation. Clock and Data Recovery Circuits.
