- ホーム
- > 洋書
- > 英文書
- > Science / Mathematics
Full Description
To surmount the continuous scaling challenges of MOSFET devices, FinFETs have emerged as the real alternative for use as the next generation device for IC fabrication technology. The objective of this book is to provide the basic theory and operating principles of FinFET devices and technology, an overview of FinFET device architecture and manufacturing processes, and detailed formulation of FinFET electrostatic and dynamic device characteristics for IC design and manufacturing. Thus, this book caters to practicing engineers transitioning to FinFET technology and prepares the next generation of device engineers and academic experts on mainstream device technology at the nanometer-nodes.
Contents
Chapter 1 Introduction...........................................................................................1
Chapter 2 Fundamentals of Semiconductor Physics............................................25
Chapter 3 Multiple-Gate Metal-Oxide-Semiconductor (MOS) System..............85
Chapter 4 Overview of FinFET Device Technology......................................... 133
Chapter 5 Large Geometry FinFET Device Operation..................................... 151
Chapter 7 Leakage Currents in FinFETs........................................................... 215
Chapter 8 Parasitic Elements in FinFETs.......................................................... 231
Chapter 9 Challenges to FinFET Process and Device Technology .................. 257
Chapter 10 FinFET Compact Models for Circuit Simulation..............................277
Index.......................................................................................................................309