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Full Description
Technological evolution and revolution are both driven by the discovery of new functionalities, new materials and the design of yet smaller, faster, and more energy-efficient components. Progress is being made at a breathtaking pace, stimulated by the rapidly growing demand for more powerful and readily available information technology. High-speed internet and data-streaming, home automation, tablets and smartphones are now "necessities" for our everyday lives. Consumer expectations for progressively more data storage and exchange appear to be insatiable.
Oxide electronics is a promising and relatively new field that has the potential to trigger major advances in information technology. Oxide interfaces are particularly intriguing. Here, low local symmetry combined with an increased susceptibility to external fields leads to unusual physical properties distinct from those of the homogeneous bulk.
In this context, ferroic domain walls have attracted recent attention as a completely new type of oxide interface. In addition to their functional properties, such walls are spatially mobile and can be created, moved, and erased on demand. This unique degree of flexibility enables domain walls to take an active role in future devices and hold a great potential as multifunctional 2D systems for nanoelectronics. With domain walls as reconfigurable electronic 2D components, a new generation of adaptive nano-technology and flexible circuitry becomes possible, that can be altered and upgraded throughout the lifetime of the device. Thus, what started out as fundamental research, at the limit of accessibility, is finally maturing into a promising concept for next-generation technology.
Contents
1: G. Catalan and N. Domingo: Physical properties inside domain walls: basic principles and scanning probe measurements
2: S. Farokhipoor, C. Magen, D. Rubi and B. Noheda: Novel phases at domain walls
3: J. Íñiguez: First-principles studies of structural domain walls
4: P. Ondrejkovic, P. Marton, V. Stepkova and J. Hlinka: Fundamental properties of ferroelectric domain walls from Ginzburg-Landau models
5: E.K.H. Salje and G. Lu: Introduction to domain boundary engineering
6: D. Evans, Ch. Cochard, R. McQuaid, A. Cano, M. Gregg, and D. Meier: Improper ferroelectric domain walls
7: A. Haussmann, L.M. Eng and S. Cherifi-Hertel: Three-dimensional optical analysis of ferroelectric domain walls
8: J.F. Scott: Turing patterns in ferroelectric domains: Nonlinear instabilities
9: M.-M. Yang and M. Alexe: Photoelectric effects at domain walls
10: L. Li and X. Pan: Transmission electron microscopy study of ferroelectric domain walls in BiFeO3 thin films - structures and switching dynamics
11: A.V. Ievlev, A. Tselev, R. Vasudevan, S.V. Kalinin, A. Morozovska, and P. Maksymovych: Nanoscale ferroelectric switching - a method to inject and study non-equilibrium domain walls
12: A. Tselev, A.V. Ievlev, R. Vasudevan, S.V, Kalinin, P. Maksymovych, and A. Morozovska: Landau-Ginzburg-Devonshire theory for the domain wall conduction and observation of the microwave conduction of domain walls
13: P.V. Yudin and L.J. McGilly: Control of ferroelectric domain wall motion using electrodes with limited conductivity
14: S. Liu, I. Grinberg and A. Rappe: Multiscale simulations of domains in ferroelectrics
15: J. Seidel and R. Ramesh: Electronics based on domain walls
