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Full Description
Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications focuses on the physical aspects of semiconductor nanostructures, including growth and processing of semiconductor nanostructures by molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser action on all types of III-V, IV, and II-VI semiconductors, nanofabrication by bottom-up and top-down approaches, real-time observations using in situ UHV-REM and high-resolution TEM of atomic structure of quantum well, nanowires, quantum dots, and heterostructures and their electrical, optical, magnetic, and spin phenomena.
The very comprehensive nature of the book makes it an indispensable source of information for researchers, scientists, and post-graduate students in the field of semiconductor physics, condensed matter physics, and physics of nanostructures, helping them in their daily research.
Contents
Chapter I. Low-Dimensional Systems: Theory and Experiment
1.1. Theory of the two-dimensional electronic systems
A.V. Chaplik, M.V. Entin
1.2. Two-dimensional semimetal in HgTe-based quantum wells
Z.D.Kvon, E.B.Olshanetsky, D.A.Kozlov, N.N.Mikhailov, S.A.Dvoretsky
1.3. Nonlinear two-dimensional electron conductivity at high filling factors
A.A.Bykov, S.A. Vitkalov
1.4. Silicon-based nanoheterostructures with quantum dots
A.V.Dvurechenskii, A.I.Yakimov
1.5. Electron transport: from nanostructures to nanoelectromechanical systems
A.G.Pogosov, M.V. Budantsev, A.A. Shevyrin, E.Yu.Zhdanov, D.A.Pohabov
1.6. Modeling of quantum transport and single-electron charging in GaAs/AlGaAs-nanostructures
O.A.Tkachenko, V.A.Tkachenko, Z.D.Kvon, D.V.Scheglov, A.L.Aseev
1.7. Spectroscopy of vibrational states in low-dimensional semiconductor systems
A.G.Milekhin, D.R.T. Zahn
Chapter II. Surface, Interface, Epitaxy
2.1. Atomic processes on silicon surface
A.V. Latyshev, L.I. Fedina, S.S. Kosolobov, S.V. Sitnikov, D.I. Rogilo, E.E. Rodyakina, D.A. Nasimov, D.V. Sheglov, A.L. Aseev
2.2. Atomic structure of low-dimensional semiconductor heterosystems
A.K.Gutakovsky, A.V.Latyshev, A.L.Aseev
2.3. Formation of GaAs step-terraced surfaces by annealing in equilibrium conditions
V.L.Alperovich, I.O.Ahundov, D.M.Kazantsev, N.S.Rudaya, E.E.Rodiakina, A.S.Kozhukhov, D.V.Shcheglov, A.N.Karpov, N.L.Schwartz, A.S.Terekhov, A.V. Latyshev
2.4. Atomic Processes in the Formation Strained Ge Layers on Si (111) and (001) Substrates within Stransky-Krastanov Growth Mechanism
S.A. Teys
2.5. Molecular-beam epitaxy of CdxHg1-xTe
Yu.G.Sidorov, A.P.Antsiferov, V.S.Varavin, S.A.Dvoretsky, N.N.Mikhailov, M.V.Yakushev, I.V.Sabinina, V.G.Remesnik, D.G.Ikusov, I.N.Uzhakov, G.Yu.Sidorov, V.D.Kuzmin, S.V.Rihlicky, V.A.Shvets, A.S.Mardezhov, E.V.Spesivtsev, A.K.Gutakovsky, A.V.Latyshev
2.6. Surface morphologies obtained by Ge deposition on bare and oxidized silicon surfaces at different temperatures A.A.Shklyaev, K.N.Romaniuk, S.S.Kosolobov, A.V.Latyshev
2.7. Monte-Carlo simulation of semiconductor nanostructures growth
I.G.Neizvestny, N.L.Shwartz
Chapter III. Radiation Effects on Semiconductor Structures
3.1. The Energy Pulse Oriented Crystallization Phenomenon in Solids (Laser Annealing)
A.V.Dvurechenskii
3.2. Universality of the {113} habit plane in Si for mixed aggregation of vacancies and self-interstitial atoms provided by topological bond defect formation
L.I.Fedina, A.K.Gutakovsky, A.V.Latyshev, A.L.Aseev
3.4. Silicon-on-insulator structures produced by ion-beam synthesis and hydrogen transfer
I.E.Tyschenko, V.P.Popov
Chapter IV. Electronic Advanced Materials
4.1. Superminiature radiation sources based on semiconductor nanostructures
V.A.Haisler, A.V.Haisler, I.A.Derebezov, A.S.Yaroshevich, A.K.Bakarov, D.V.Dmitriev, A.K.Kalagin, A.I.Toropov, M.M.Kachanova, Yu.A.Zhivodkov, T.A.Gavrilova, A.S.Medvedev, L.A.Nenasheva, O.I.Semenova, K.V.Grachev, V.K.Sandyrev, A.S.Kozhukhov, D.V.Shcheglov, D.B.Tretyakov, I.I.Beterov, V.M.Entin, I.I.Ryabtsev, A.V.Latyshev, A.L.Aseev
4.2. Three-dimensional systems and nanostructures: technology, physics and applications
V.Ya.Prinz
4.3. The nature of defects responsible for transport in a hafnia-based resistive random access memory element
D.R.Islamov, T.V.Perevalov, V.A.Gritsenko, V.Sh.Aliev, A.A.Saraev, V.V. Kaichev, M.V.Ivanova, M.V.Zamo1ryanskaya, A. Chin
4.4. The optical multiplexor based on a multiple of connected waveguides in silicon-on-insulator structures
A.V.Tsarev
