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Full Description
This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields.
The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths.
Contents
Role of Defects in the Dopant Diffusion in Si
Peter Pichler
Electron and Proton Irradiation of Silicon
Arne Nylandsted Larsen and Abdelmadjid Mesli
Ion Implantation Defects and Shallow Junctions in SI and GE
Enrico Napolitani and Giuliana Impellizzeri
Defective Solid-phase Epitaxial Growth of Si
Nicholas G. Rudawski, Aaron G. Lind and Thomas P. Martin
Nanoindentation of Silicon and Germanium
Mangalampalli S. R. N. Kiran, Bianca Haberl, Jodie E. Bradby and James S. Williams
Analytical Techniques for Electrically Active Defect Detection
Eddy Simoen, Johan Lauwaert and Henk Vrielinck
Surface and Defect States in Semiconductors Investigated by Surface Photovoltage
Daniela Cavalcoli, Beatrice Fraboni and Anna Cavallini
Point Defects in ZnO
Matthew D. McCluskey
Point Defects in GaN
Michael A. Reshchikov
Point Defects in Silicon CarbideNaoya Iwamoto and Bengt G. Svensson
