Silicon-Germanium Strained Layers and Heterostructures: Semi-Conductor and Semi-Metals Series Volume 74 (Semiconductors and Semimetals") / Willander, M./ Jain, Suresh C.

Silicon-Germanium Strained Layers and Heterostructures: Semi-Conductor and Semi-Metals Series Volume 74 (Semiconductors and Semimetals") 〈74〉（2ND）

Willander, M./ Jain, Suresh C.

Academic Press（2003/10発売）

オンデマンド(OD/POD)版です。キャンセルは承れません。

製本 Hardcover:ハードカバー版／ページ数 322 p.
言語 ENG
商品コード 9780127521831
DDC分類 621.381

Full Description

The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling.

Introduction; Strain, Stability, reliability and growth; mechanism of strain relaxation; strain, growth, and TED in SiGeC layers; Bandstructure and related properties; Heterostructure Bipolar Transistors; FETs and other devices.