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Full Description
The 5th International Workshop on Beam Injection Assessment of Defects in Semiconductors (BIADS 98) focussed on many theoretical and experimental aspects of this topic. The aim was to bring together specialists working in the fields of both fundamental research and applications. There were more than 80 participants from 15 countries all over the world.
Contents
Charge Collection Scanning Microscopy: Non-Conventional Applications
EBIC Study of Field Effect Transistors on Modulation-Doped AlGaAs/lnGaAs/GaAs Heterostructures
EBIC of Strained Si/SiGe 2DEGs Showing Lateral Electron Confinement
Laser Induced Mapping for Separation of Bulk and Surface Recombination
Analysis of Minority Carrier Diffusion in the Presence of a Dislocation Array: Effective Diffusion Length, Luminescence Efficiency and Dark Current
Detection and Characterisation of 'Sleeping' Defects in Silicon by LBIC Scan Maps at 80 K.
Combined MOS/EBIC and Tem Study of Electrically Active Defects in SOI Wafers
Characterization of Laser Structures by EBIC Measurements and Simulation
Evaluation of p-n Junction Position and Channel Length in Si Devices with Resolution of a Few Nanometers by Low-Energy EBIC
Monte Carlo Simulation of the Recombination Contrast of Dislocations
EBIC Characterization of Oxygen Precipitation and Denuded Zone in Intrinsically Gettered P-Type Czochralski Silicon
Impact of Phosphorus Diffusion on the Contamination Level of Dislocations in Deformed Float Zone Silicon as Studied by Beam Injection Techniques
LBIC Investigations of the Lifetime Degradation by Extended Defects in Multicrystalline Solar Silicon
Determination of the Surface Recombination Velocity and of Its Evolution in Monocrystalline Silicon by the Light Beam Induced Current Technique in Planar Configuration
SEM-EBIC Study of Defects in Epitaxial AlGaN Layers
Minority Carrier Diffusion Length in AlGaN: A Combined Electron Beam Induced Current and Transmission Microscopy Study
Ion Beam Induced Luminescence
Nanocharacterization of Semiconductors by Scanning Photoluminescence Microscopy
Cathodoluminescence Microscopy of Semiconductor Devices Using a Novel Detector with High Collection and Backscattered Electron Rejection Efficiency
Cathodoluminescence Study on ZnO and GaN
Cathodoluminescence Investigation of Diffusion Studies on the Arsenic Sublattice in Gallium Arsenide
Cathodoluminescence from Nanocrystalline Silicon Films in the Scanning Electron Microscope
The Spatial Distribution of Modulated CL Signal in Inhomogeneous Semiconductors with Large Diffusion Length
Effect of Plastic Deformation on the Luminescence of ZnSe Crystals
Effect of Erbidum on the Luminescence Properties of GaSb Crystals
Direct Imaging of the Crystalline and Chemical Nanostructure of GA,IN-Nitrides by Highly Spatially-, Spectrally- and Time-Resolved Cathodoluminescence
Cathodoluminescence and Photoluminescence Characterisation of Etched Mesas of ZnTe/ZnMgTe Quantum Wells under Tensile Strain
Cathodoluminescence Study of Defect Distribution at Different Depths in Films SiO2/Si
Cathodoluminescence Dependence on Beam Generation Conditions and Surface Properties of Materials
Neat Field Optics: Comeback of Light in Microscopy
Near-Field Cathodoluminescence (NF-CL) Investigations on Semiconducting Materials
Local Stress, Surface Reconstruction, and Bulk Defect Nucleation: An STM Study on Silicon
Correlative SEM/STM Study of Local Electronic Properties in Compound Semiconductors
Observation and Modelization of the Electrostatic Force due to the Local Variations of the Surface Potential by Electrostatic Force Microscopy (EFM)
The Sloc Positron Beam Technique - A Unique Tool for the Study of Vacancy-Type Defects in Semiconductors
Minority Carrier Transient Spectroscopy of Copper-Silicide and Nickel-Disilicide Precipitates in Silicon
Grain Growth of ZnSe Recrystallized in the Solid Phase
Lateral Doping Inhomogeneities as Revealed by μ-NEXAFS and μ-PES
Application of Surface Electron Beam Induced Voltage Method for the Contactless Characterization of Semiconductor Structures
Modification of Electronical and Optical Properties in SiO2 Films by Electron Beam Irradiation
Fabrication and Ellipsometric Investigation of Thin Films of Rare-Earth Oxides
Non-Destructive Investigations of Co and CoSi2-x Films on Si Substrate
Characterization of Laser-Irradiated CdxHg1-xTe Solid Solutions by Scanning Microscopy Method
Scanning Acoustic Microscopes for the Investigation of Ferroelectric Properties of Materials
The Nature of the Electronic States of Cu3Si-Precipitates in Silicon
TEM and Photoluminescence Investigations of InGaAs/GaAs Quantum Well Layers
The Assessment of Micro-Analytical Techniques to the Semiconductor Manufacturing Environment
Gate Oxide Defect Analysis Using Scanning Electron Microscopy (SEM)/Metal Oxide Semiconductor (MOS)/Electron Beam Induced Current (EBIC) with Sub-Nano Ampere Current Breakdown
Defect Characterization in Metal-Oxide-Semiconductor Field-Effect-Transistors with Trench Gates by Electron Beam-Induced Current Technique
Analysis of Non-Uniform Contamination Profiles by Lifetime Data
Scanning Photoluminescence for Wafer Characterization
Failure Mode Analysis of a 0.25 μm CMOS Technology by Scanning Electron and Ion Beams
Failure Analysis of Neutron-Irradiated MQW InGaAsP/InP Lasers by EBIC
Inline Analysis of Defects in Microelectronic Fabrication by Optical and Scanning Electron Microscopical Techniques
Application of Small Pulsed Ion Beams for Depth Profiling on Beveled Semiconductor Structures
Correlation of Cathodoluminescence and EBIC Contrast in GaAs/AlxGa1-xAs Quantum Well Structures
EBIC and Cathodoluminescence Study of the Bonded Silicon Wafers
Spatially Resolved Cathodoluminescence Study on CVD Homoepitaxial Diamond Film
Cathodoluminescence Study of Heavily Proton Irradiated Heteroepitaxial n+-p InP/Si Solar Cells
Electrical Properties of SiGe Epitaxial Layers for Photovoltaic Application as Studied by Scanning Electron Microscopical Methods
Stress Measurements in sub-μm Si Structures Using Raman Spectroscopy
Two Dimensional Mapping of pn Junctions by Electron Holography
The Future of Beam Injection Techniques: Summary of the Round-Table Discussion Held at BIADS 98
